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HUF75309D3ST

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
100
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
500
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
10 100
20
0
1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10ms
1ms
V
DSS(MAX)
= 55V
T
J
= MAX RATED
T
C
= 25
o
C
100µs
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
SINGLE PULSE
10
100
0.01 0.1 1 1
0
0.001
1
200
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
8
16
24
32
40
246
8
0
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX, T
C
= 25
o
C
V
GS
= 5V
V
GS
= 7V
V
GS
= 10V
8
16
24
32
40
246
8
0
0
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
175
o
C
HUF75309P3, HUF75309D3, HUF75309D3S
©2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40 0 40 80 120 160 200-80
0.5
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
PULSE DURATION = 80µs, V
GS
= 10V, I
D
= 19A
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40 0 40 80 120 160 200-80
0.6
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
1.0
1.1
1.2
-40 0 40 80 120 160 200
0.9
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
100
200
300
400
500
10 20 30 40 50 60
0
0
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
3691
2
0
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 19A
I
D
= 15A
I
D
= 10A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
HUF75309P3, HUF75309D3, HUF75309D3S
©2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Rev. B
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20
V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUF75309P3, HUF75309D3, HUF75309D3S
P1-P3P4-P6P7-P9P10-P10

HUF75309D3ST

Mfr. #:
Buy HUF75309D3ST
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 55V 19A DPAK
Lifecycle:
New from this manufacturer.
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