NXP Semiconductors
PMPB29XPE
20 V, single P-channel Trench MOSFET
PMPB29XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 5 December 2012 3 / 14
Symbol Parameter Conditions Min Max Unit
T
sp
= 25 °C - 12.5 W
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - -1.8 A
ESD maximum rating
V
ESD
electrostatic discharge voltage HBM [2] - 2300 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
[2] Measured between all pins.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature