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MDS150
150 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS150 is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The
transistor includes input prematch for broadband performance. The device has
gold thin-film metallization and diffused ballasting in a hermetically sealed
package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
1
350 W
Maximum Voltage and Current
Collector to Emitter Voltage (BV
ces
) 60 V
Emitter to Base Voltage (BV
ebo
) 3.5 V
Peak Collector Current (I
c
) 4 A
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Out 150 W
P
in
Power Input 20 W
P
g
Power Gain 10 dB
η
c
Collector Efficiency
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
34 %
VSWR
1
Load Mismatch Tolerance 3:1
Pd
1
Pulse Droop 0.5 dB
Trise
1
Rise Time 100 nSec
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Emitter to Base Breakdown Ie = 5 mA 3.5 V
BV
ces
Collector to Emitter Breakdown Ic = 25 mA 60 V
BV
cbo
Collector to Base Breakdown Ic = 25 mA 60 V
h
FE
DC – Current Gain Vce = 5V, Ic = 500 mA 20
θjc
1
Thermal Resistance 0.5
°C/W
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 120, repeated every 6.4mS
Initial Release - August 2007 Rev. A
