Preliminary
SIDC56D120F6
Edited by INFINEON Technologies AI PS DD HV3, L 4225M, Edition 1, 8.01.2002
Fast switching diode chip in EMCON-Technology
This chip is used for:
• EUPEC power modules and
discrete devices
FEATURES:
• 1200V EMCON technology 120 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Applications:
• SMPS, resonant applications,
drives
A
Chip Type V
R
I
F
Die Size Package Ordering Code
SIDC56D120F6
1200V
75A 7.5 x 7.5 mm
2
sawn on foil
Q67050-A4186-
A001
MECHANICAL PARAMETER:
Raster size 7.5 x 7.5
Area total / active 56.25 / 46.65
Anode pad size 6.78 x 6.78
mm
2
Thickness 120 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 248 pcs
Passivation frontside Photoimide
Anode metallisation 3200 nm AlSiCu
Cathode metallisation
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, ≤500µm
Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
