ESD6116
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2
ELECTRICAL SPECIFICATIONS AND CONDITIONS
Table 2. PARAMETERS AND MAXIMUM ABSOLUTE OPERATING CONDITIONS
Parameter Rating Units
Storage Temperature Range −55 to +150 °C
Operating Temperature Range −30 to +85 °C
Failing to Nonconductive, I
2
t (Maximum Ipp Value Using 10/1000 ms Pulse).
(Notes 1 and 2)
100 A
1. The device must not burn to open−circuit, when the value is below maximum I
PP
.
2. This parameter is characterized at 25°C using an ON Semiconductor−specific test board.
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 3)
Symbol
Parameter Conditions Min Typ Max Units
I
OFF
Stand−Off Quiescent Current Stand−Off Voltage V
OFF
= 10 V 500 nA
V
BR
Break Down Voltage Break Down Current I
BR
= 15 mA 16 V
V
CL
Clamping Voltage during Transient Clamping Current I
CL
= 1 A
(Note 5)
20 V
V
F
Forward Voltage Forward Current I
F
= 850 mA 1.3 V
C
L1
Line Capacitance
V
BIAS
= 0 V 172 pF
C
L2
V
BIAS
= 5 V, T
A
= 25°C; 66 83 100 pF
V
ESD
ESD Protection Peak Discharge
Voltage at any Channel Input
a) Contact Discharge per IEC 61000−4−2 Standard
b) Air Discharge per IEC 61000−4−2 Standard
T
A
= 25°C
(Note 4)
±30
±30
kV
Minimum Attenuation
Freq = 80 MHz − 1 Ghz
Freq = 1 − 4 GHz
R
SOURCE
= R
LOAD
= 50 W
T
A
= 25°C
8
20
dB
3. All parameters specified for T
A
= −30°C to 85°C unless otherwise noted.
4. Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330 W.
5. Transient: 8 x 20 ms current pulse.
