*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD214B-R250~R21000 Glass Passivated Rectifiers
Features
■ RoHS compliant*
■ Glass passivated chip
■ Low reverse leakage current
■ Low forward voltage drop
■ High current capability
General Information
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Notes:
1 See Forward Derating Curve.
2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass
Passivated Rectifier Diodes offer a forward current of 2.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Parameter Symbol CD214B-R250~R21000 Unit
Operating Temperature Range TJ -65 to +175 °C
Storage Temperature Range TSTG -65 to +170 °C
Parameter Symbol
CD214B-
Unit
R250 R2100 R2200 R2400 R2600 R2800 R21000
Maximum Repetitive
Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC
Blocking Voltage
V
DC
50 100 200 400 600 800 1000 V
Max. Average Forward
Rectified Current
1
I
(AV)
2.0 A
DC Reverse Current @
Rated DC Blocking Voltage
(@T
J
= 25 °C)
I
R
5.0 µA
DC Reverse Current @
Rated DC Blocking Voltage
(@T
J
= 125 °C)
I
R
30 µA
Typical Junction Capacitance
2
C
J
25 pF
Maximum Instantaneous
Forward Voltage @ 1 A
V
F
1.0 V
Typical Thermal Resistance
3
R
θJL
16 °C/W
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
I
FSM
65 A
