Characteristics STPS40120C
2/9 Doc ID 11214 Rev 3
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward
current
δ = 0.5
T
c
= 145 °C
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 200 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs, T
j
= 25 °C 10500 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid runaway for a diode on its own heatsink
175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Tot al
1.6
0.85
°C/W
R
th(c)
Coupling Total 0.1 °C/W
Table 4. Static electrical characteristics (per diode)
Symbol Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
25 μA
T
j
= 125 °C 4 12 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.58 x I
F(AV)
+ 0.0075 I
F
2
(RMS)
Forward voltage drop
T
j
= 25 °C
I
F
= 7.5 A
0.73
V
T
j
= 125 °C 0.57 0.61
T
j
= 25 °C
I
F
= 20 A
0.9
T
j
= 125 °C 0.69 0.73
T
j
= 25 °C
I
F
= 40 A
1
T
j
= 125 °C 0.83 0.88
Ptot
dTj
--------------
1
Rth j a–()
--------------------------
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