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VS-65EPS16LHM3

P1-P3P4-P6
VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
1
Document Number: 96475
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Input Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
•Flexible solution for reliable AC power
rectification
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRIMARY CHARACTERISTICS
I
F(AV)
65 A
V
R
1600 V
V
F
at I
F
1.17 V
I
FSM
950 A
T
J
max. 150 °C
Package TO-247AD 2L, TO-247AD 3L
Circuit configuration Single
TO-247AD 2L
TO-247AD 3L
1
3
2
1
3
2
2
1
3
Ba
se cathode
Anode Anode
Base cathode
2
13
Anode
Cathode
VS-65APS16LHM3
VS-65EPS16LHM3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 65 A
V
RRM
1600 V
I
FSM
950 A
V
F
30 A, T
J
= 25 °C 1.0 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-65EPS16LHM3 1600 1700
1.3
VS-65APS16LHM3 1600 1700
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 120 °C, 180° conduction half sine wave 65
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 800
10 ms sine pulse, no voltage reapplied 950
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 3190
A
2
s
10 ms sine pulse, no voltage reapplied 4510
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 45 100 A
2
s
VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
2
Document Number: 96475
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
65 A, T
J
= 25 °C 1.17 V
Forward slope resistance r
t
T
J
= 150 °C
3.98 m
Threshold voltage V
F(TO)
0.74 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= rated V
RRM
0.1
mA
T
J
= 150 °C 1.3
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance, junction to case R
thJC
DC operation 0.25
°C/WMaximum thermal resistance, junction to ambient R
thJA
40
Typical thermal resistance, case to heatsink R
thCS
Mounting surface, smooth, and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style TO-247AD 2L 65EPS16LH
Case style TO-247AD 3L 65APS16LH
Maximum Allowable Case Temperature (°C)
Average On-State Current (A)
90
100
110
120
130
140
150
0 10203040506070
R
thJC
(DC) = 0.25 °C/W
30° 60° 90°
120°
180°
Conduction angle
Ø
90
100
110
120
130
140
150
0 20406080100120
Maximum Allowable Case Temperature (°C)
Average On-State Current (A)
180°
R
thJC
(DC) = 0.25 °C/W
30°
60°
90°
120°
Conduction Angle
DC°
Ø
VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
3
Document Number: 96475
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
0
20
40
60
80
100
0 10203040506070
Max. Average On-State Power Loss (W)
Average On - State Current (A)
180°
120°
90°
60°
30°
RMS limit
Conduction Angle
T
J
= 150 °C
Ø
0
20
40
60
80
100
120
140
0 20406080100
Max. Average On-State Power Loss (W)
Average On- State Current (A)
180°
120°
90°
60°
30°
RMS limit
DC
Conduction
Angle
T
J
= 150 °C
Ø
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulse (N)
110100
200
300
400
500
600
700
800
900
VS-60EPS.. Series
At any rated load condition and with
rated V
rrm
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
100
200
300
400
500
600
700
800
900
1000
VS-60EPS.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
rrm
reapplied
1
10
100
1000
0.51.01.52.02.5
I
F
- Instantaneous Forward Current (A)
V
F
-Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
P1-P3P4-P6

VS-65EPS16LHM3

Mfr. #:
Buy VS-65EPS16LHM3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 65A If; 1600V Vr TO-247AD 2L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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