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2N7002-T1-E3

P1-P3P4-P6
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
V
GS(th)
(V) I
D
(A)
2N7000
5 @ V
GS
= 10 V 0.8 to 3 0.2
2N7002 7.5 @ V
GS
= 10 V 1 to 2.5 0.115
VQ1000J
60
5.5 @ V
GS
= 10 V 0.8 to 2.5 0.225
VQ1000P 5.5 @ V
GS
= 10 V 0.8 to 2.5 0.225
BS170 5 @ V
GS
= 10 V 0.8 to 3 0.5
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Plastic: VQ1000J
Sidebraze: VQ1000P
Top View
TO-92-18RM
(TO-18 Lead Form)
D
S
G
1
2
3
2N7000
BS170
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
Marking Code: 72wll
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N7000 2N7002
VQ1000J VQ1000P
VQ1000J/P
BS170 Unit
Drain-Source Voltage V
DS
60 60 60 60 60
Gate-Source Voltage—Non-Repetitive V
GSM
"40 "40 "30 "25
V
Gate-Source Voltage—Continuous V
GS
"20 "20 "20 "20 "20
Continuous Drain Current
T
A
= 25_C
0.2 0.115 0.225 0.225 0.5
Continuous Drain Current
(T
J
= 150_C)
T
A
= 100_C
I
D
0.13 0.073 0.14 0.14 0.175
A
Pulsed Drain Current
a
I
DM
0.5 0.8 1 1
T
A
= 25_C
0.4 0.2 1.3 1.3 2 0.83
Power Dissipation
T
A
= 100_C
P
D
0.16 0.08 0.52 0.52 0.8
W
Thermal Resistance, Junction-to-Ambient R
thJA
312.5 625 96 96 62.5 156
_C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. t
p
v 50 ms.
SPECIFICATIONSĊ2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 10 mA
70 60 60
V
DS
= V
GS
, I
D
= 1 mA 2.1 0.8 3
V
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA 2.0 1 2.5
V
DS
= 0 V, V
GS
= "15 V "10
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100
nA
V
DS
= 48 V, V
GS
= 0 V 1
T
C
= 125_C
1000
m
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V 1
mA
T
C
= 125_C
500
V
DS
= 10 V, V
GS
= 4.5 V 0.35 0.075
On-State Drain Current
b
I
D(on)
V
DS
= 7.5 V, V
GS
= 10 V 1 0.5
A
V
GS
= 4.5 V, I
D
= 0.075 A 4.5 5.3
V
GS
= 5 V, I
D
= 0.05 A 3.2 7.5
Drain-Source On-Resistance
b
r
DS(on)
T
C
= 125_C
5.8 13.5
W
DS(on)
V
GS
= 10 V, I
D
= 0.5 A 2.4 5 7.5
T
J
= 125_C
4.4 9 13.5
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A 100 80
Common Source Output Conductance
b
g
os
V
DS
= 5 V, I
D
= 0.05 A 0.5
mS
Dynamic
Input Capacitance C
iss
22 60 50
Output Capacitance C
oss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
11 25 25
pF
Reverse Transfer Capacitance C
rss
f = 1 MHz
2 5 5
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-3
SPECIFICATIONSĊ2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Switching
d
Turn-On Time t
ON
V
DD
= 15 V, R
L
= 25 W
7 10
Turn-Off Time t
OFF
V
DD
= 15 V, R
L
= 25
W
I
D
^0.5 A, V
GEN
= 10 V, R
G
= 25 W
7 10
Turn-On Time t
ON
V
DD
= 30 V, R
L
= 150 W
7 20
ns
Turn-Off Time t
OFF
V
DD
= 30 V, R
L
= 150
W
I
D
^ 0.2 A, V
GEN
= 10 V, R
G
= 25 W
11 20
SPECIFICATIONSĊVQ1000J/P AND BS170 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA
70 60 60
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA 2.1 0.8 2.5 0.8 3
V
V
DS
= 0 V, V
GS
= "10 V "100
Gate-Body Leakage I
GSS
T
J
= 125_C
"500
nA
GSS
V
DS
= 0 V, V
GS
= "15 V "10
V
DS
= 25 V, V
GS
= 0 V 0.5
Zero Gate Voltage Drain Current I
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125_C
500
mA
DSS
V
DS
= 60 V, V
GS
= 0 V 10
m
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V 1 0.5 A
V
GS
= 5 V, I
D
= 0.2 A 4 7.5
V
GS
= 10 V, I
D
= 0.2 A 2.3 5
W
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.3 A 2.3 5.5
W
T
J
= 125_C
4.2 7.6
V
DS
= 10 V, I
D
= 0.2 A 100
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A 100
mS
Common Source Output Conductance
b
g
os
V
DS
=5 V, I
D
= 0.05 A 0.5
Dynamic
Input Capacitance C
iss
22 60 60
Output Capacitance C
oss
V
DS
=25 V, V
GS
= 0 V
f = 1 MHz
11 25
pF
Reverse Transfer Capacitance C
rss
f = 1 MHz
2 5
Switching
d
Turn-On Time t
ON
V
DD
= 15 V, R
L
= 23 W
7 10
Turn-Off Time t
OFF
V
DD
= 15 V, R
L
= 23
W
I
D
^ 0.6 A, V
GEN
= 10 V, R
G
= 25 W
7 10
Turn-On Time t
ON
V
DD
= 25 V, R
L
= 125 W
7 10
ns
Turn-Off Time t
OFF
V
DD
= 25 V, R
L
= 125
W
I
D
^ 0.2 A, V
GEN
= 10 V, R
G
= 25 W
7 10
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
P1-P3P4-P6

2N7002-T1-E3

Mfr. #:
Buy 2N7002-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 0.115A 0.2W
Lifecycle:
New from this manufacturer.
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