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2N7002-T1-GE3

P1-P3P4-P6
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
CapacitanceOn-Resistance vs. Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
0123456
0.0
0.2
0.4
0.6
0.8
1.0
012345678
Output Characteristics Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
V
GS
= 10, 9, 8, 7 V
6.5 V
V
GS
– Gate-to-Source Voltage (V)
T
J
= –55_C
25_C
125_C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V 2.5 V
2, 1 V
0
4
8
12
16
20
0 400 800 1200 1600 2000 2400
0.0
0.5
1.0
1.5
2.0
–55 –30 –5 20 45 70 95 120 145
0
1
2
3
4
5
6
7
0.0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35
Gate Charge
Q
g
– Total Gate Charge (pC)
V
DS
– Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
I
D
= 0.5 A
I
D
– Drain Current (A)
On-Resistance vs. Junction Temperature
V
GS
= 10 V, r
DS
@ 0.5 A
T
J
– Junction Temperature (_C)
r
DS
@ 10 V = V
GS
r
DS
@ 5 V = V
GS
V
GS
= 5 V, r
DS
@ 0.05 A
V
GS
= 0 V
f = 1 MHz
V
DS
= 30 V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
r
DS(on)
– On-Resistance ( Ω )
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance ( Ω )
(Normalized)
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0
1
2
3
4
5
6
0 2 4 6 8 101214161820
0.001
0.010
0.100
1.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
V
SD
– Source-to-Drain Voltage (V) V
GS
– Gate-to-Source Voltage (V)
500 mA
I
D
= 50 mA
T
J
= 25_C
T
J
= 125_C
Threshold Voltage
–0.75
–0.50
–0.25
–0.00
0.25
0.50
–50 –25 0 25 50 75 100 125 150
I
D
= 250 mA
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 10010 1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
Normalized Effective Transient
Thermal Impedance
t
1
– Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156_C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
S
– Source Current (A)
r
DS(on)
– On-Resistance ( Ω )
V
GS(th)
– Variance (V)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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therein, which apply to these products.
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P1-P3P4-P6

2N7002-T1-GE3

Mfr. #:
Buy 2N7002-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 115mA 0.2W 7.5ohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
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