BUK7210-55B_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 11 December 2008 3 of 14
NXP Semiconductors
BUK7210-55B
N-channel TrenchMOS standard level FET
4. Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Current is limited by power dissipation chip rating.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 185 °C - 55 V
V
DGR
drain-gate voltage R
GS
=20kΩ; 25 °C ≤ T
j
≤ 185 °C - 55 V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 3;
[1] -89.6A
T
mb
=100°C; V
GS
= 10 V; see Figure 1 -65.5A
T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 3
;
[2]
-75A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed - 335 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -167W
T
stg
storage temperature -55 185 °C
T
j
junction temperature -55 185 °C
Source-drain diode
I
S
source current T
mb
=25°C; [2] -75A
T
mb
=25°C; [3] -89.6A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 335 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=75A; V
sup
≤ 55 V; R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped inductive load
-173mJ
