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BYV34-600,127
P1-P3
P4-P6
P7-P9
P10-P10
BYV34-600_1
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 01 — 4 October 2007
3 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
6.
Characteristics
Fig 1.
T
ransient thermal impedance from junction to mounting base per diode as a function of pulse width
001aag912
10
−
1
10
−
2
1
10
Z
th(j-mb)
(K/W)
10
−
3
t
p
(s)
10
−
6
11
0
10
−
1
10
−
2
10
−
5
10
−
3
10
−
4
t
p
t
p
T
P
t
T
δ
=
T
able 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
P
arameter
Conditions
Min
Ty
p
Max
Unit
Static characteristics
V
F
f
orward v
oltage
I
F
= 10 A; T
j
= 150
°
C; see
Figure 2
-
0.92
1.16
V
I
F
= 20 A; see
Figure 2
-
1.07
1.48
V
I
R
re
verse current
V
R
= 600 V
-
10
50
µ
A
V
R
= 600 V
; T
j
= 100
°
C
-
0.2
0.6
mA
Dynamic characteristics
Q
r
recov
ered charge
I
F
=2At
oV
R
≥
30 V; dI
F
/
d
t=2
0A
/
µ
s;
see
Figure 3
-
4
07
0n
C
t
rr
re
verse reco
v
er
y time
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/
µ
s; see
Figure 3
-
5
06
0n
s
I
RM
peak re
verse reco
v
er
y
current
I
F
= 10 A to V
R
≥
30 V
;
dI
F
/
d
t=5
0A
/
µ
s; T
j
= 100
°
C;
see
Figure 3
-
35A
V
FR
f
orward reco
very
voltage
I
F
= 10 A; dI
F
/
d
t=1
0A
/
µ
s;
see
Figure 4
-
3.2
-
V
BYV34-600_1
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 01 — 4 October 2007
4 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
(1)
T
j
= 150
°
C; typical values
(2)
T
j
= 150
°
C; maximum v
alues
(3)
T
j
=2
5
°
C; maximum values
Fig 2.
Forward current as a function of f
orwar
d v
oltage
003aab485
0
5
10
15
20
25
30
0
0
.4
0.8
1
.2
1
.6
V
F
(V)
I
F
(A)
(1)
(2)
(3)
Fig 3.
Rever
se recovery definitions
Fig 4.
Forward recovery definitions
001aab911
t
rr
time
100 %
10 %
I
F
dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FR
V
F
I
F
V
F
BYV34-600_1
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 01 — 4 October 2007
5 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
I
F(A
V)
=I
F(RMS)
×√
δ
a = form f
actor = I
F(RMS)
/I
F(A
V)
Fig 5.
Forward po
wer dissipation as a function of
average f
orward current; square wa
vef
orm;
maximum v
alues
Fig 6.
Forward po
wer dissipation as a function of
average f
orward current; sin
usoidal wavef
orm;
maximum v
alues
003aab483
0
3
6
9
12
15
18
0
5
10
15
I
F(
AV)
(A)
P
tot
(W)
δ
= 1
0.
5
0.
2
0.
1
003aab484
0
2
4
6
8
10
12
0369
I
F(
AV)
(A)
P
tot
(W)
a = 1.
57
1.
9
2.
2
2.
8
4.
0
P1-P3
P4-P6
P7-P9
P10-P10
BYV34-600,127
Mfr. #:
Buy BYV34-600,127
Manufacturer:
WeEn Semiconductors
Description:
Diodes - General Purpose, Power, Switching Diode Ult Fast Recov Rectifier 600V 20A
Lifecycle:
New from this manufacturer.
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BYV34-600,127