IRG4BC20SD-SPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 27 40 I
C
= 10A
Qge Gate - Emitter Charge (turn-on) — 4.3 6.5 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 10 15 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 62 — T
J
= 25°C
t
r
Rise Time — 32 — ns I
C
= 10A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 690 1040 V
GE
= 15V, R
G
= 50Ω
t
f
Fall Time — 480 730 Energy losses include "tail" and
E
on
Turn-On Switching Loss — 0.32 — diode reverse recovery.
E
off
Turn-Off Switching Loss — 2.58 — mJ See Fig. 9, 10, 11,18
E
ts
Total Switching Loss — 2.90 4.5
t
d(on)
Turn-On Delay Time — 64 — T
J
= 150°C, See Fig. 10,11, 18
t
r
Rise Time — 35 — ns I
C
= 10A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 980 — V
GE
= 15V, R
G
= 50Ω
t
f
Fall Time — 800 — Energy losses include "tail" and
E
ts
Total Switching Loss — 4.33 — mJ diode reverse recovery.
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 550 — V
GE
= 0V
C
oes
Output Capacitance — 39 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 7.1 — ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time — 37 55 ns T
J
= 25°C See Fig.
—5590 T
J
= 125°C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current — 3.5 5.0 A T
J
= 25°C See Fig.
— 4.5 8.0 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge — 65 138 nC T
J
= 25°C See Fig.
— 124 360 T
J
= 125°C 16 di/dt = 200Aµs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs T
J
= 25°C See Fig.
During t
b
— 210 — T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltageƒ 600 — — V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.40 1.6 I
C
= 10A V
GE
= 15V
— 1.85 — V I
C
= 19A See Fig. 2, 5
— 1.44 — I
C
= 10A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -11 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 2.0 5.8 — S V
CE
= 100V, I
C
= 10A
I
CES
Zero Gate Voltage Collector Current — — 250 µA V
GE
= 0V, V
CE
= 600V
— — 1700 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.4 1.7 V I
C
= 8.0A See Fig. 13
— 1.3 1.6 I
C
= 8.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
