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NCV8535MN500R2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
NCV8535
www.onsemi.com
4
PIN FUNCTION DESCRIPTION
Pin No. Pin Name Description
FIXED VERSION
1, 2
V
out
Regulated output voltage. Bypass to ground with C
out
w 1.0 mF.
3 SENSE For output voltage sensing, connect to Pins 1 and 2.
4 GND Power Supply Ground
7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise.
8 SD Shutdown pin. When not in use, this pin should be connected to the input pin.
9, 10 V
in
Power Supply Input Voltage
5, 6 NC Not Connected
EPAD EPAD Exposed thermal pad should be connected to ground.
ADJUSTABLE VERSION
1, 2
V
out
Regulated output voltage. Bypass to ground with C
out
w 1.0 mF.
3 Adj Adjustable pin; reference voltage = 1.25 V.
4 GND Power Supply Ground
7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise.
8 SD Shutdown pin. When not in use, this pin should be connected to the input pin.
9, 10 V
in
Power Supply Input Voltage
5, 6 NC Not Connected
EPAD EPAD Exposed thermal pad should be connected to ground.
MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage V
in
−0.3 to +16 V
Output Voltage V
out
−0.3 to V
in
+0.3 or 10 V* V
Shutdown Pin Voltage V
sh
−0.3 to +16 V
Junction Temperature Range T
J
−40 to +150 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
Charged Device Model (CDM) tested per EIA/JESD22−C101
*Which ever is less. Reverse bias protection feature valid only if V
out
− V
in
≤ 7 V.
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Value)
Unit
Min Pad Board (Note 1) 1, Pad Board (Note 1)
Junction−to−Air, qJA
215 66 °C/W
Junction−to−Pin, yJL2
55 17 °C/W
1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and
heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions
are under natural convection or zero air flow.
NCV8535
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS – 5.0 V
(V
out
= 5.0 V typical, V
in
= 5.4 V, T
A
= −40°C to +85°C, unless otherwise noted, Note 2.)
Characteristic Symbol Min Typ Max Unit
Output Voltage (Accuracy)
V
in
= 5.4 V to 9.0 V, I
load
= 0.1 mA to 500 mA, T
A
= 25°C
V
out
−0.9%
4.955
5.0 +0.9%
5.045
V
Output Voltage (Accuracy)
V
in
= 5.4 V to 9.0 V, I
load
= 0.1 mA to 500 mA, T
A
= 0°C to +85°C
V
out
−1.4%
4.930
5.0 +1.4%
5.070
V
Output Voltage (Accuracy)
V
in
= 5.4 V to 9.0 V, I
load
= 0.1 mA to 500 mA, T
A
= −40°C to +125°C
V
out
−1.5%
4.925
5.0 +1.5%
5.075
V
Line Regulation
V
in
= 5.4 V to 12 V, I
load
= 0.1 mA
Line
Reg
0.04 mV/V
Load Regulation
V
in
= 5.4 V, I
load
= 0.1 mA to 500 mA
Load
Reg
0.04 mV/mA
Dropout Voltage (See App Note)
I
load
= 500 mA
I
load
= 300 mA
I
load
= 50 mA
I
load
= 0.1 mA
V
DO
340
230
110
10
mV
Peak Output Current (See Figure 16) Ipk 500 700 830 mA
Short Output Current (See Figure 16) I
sc
930 mA
Thermal Shutdown T
J
160 °C
Ground Current
In Regulation
I
load
= 500 mA (Note 3)
I
load
= 300 mA (Note 3)
I
load
= 50 mA
I
load
= 0.1 mA
In Dropout
V
in
= 4.9 V, I
load
= 0.1 mA
In Shutdown
S
D
= 0 V
I
GND
I
GNDsh
9.0
4.6
0.8
−
−
0.07
14
7.5
2.5
190
500
1.0
mA
mA
mA
mA
Output Noise
C
nr
= 0 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
C
nr
= 10 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
V
noise
93
58
mVrms
mVrms
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
2.0
0.4
V
V
S
D
Input Current, V
SD
= 0 V to 0.4 V or V
SD
= 2.0 V to V
in
I
SD
0.07 1.0
mA
Output Current In Shutdown Mode, V
out
= 0 V I
OSD
0.07 1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V
in
= 0 V, V
out_forced
= 5.0 V)
I
OUTR
10
mA
2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T
J
= T
A
= 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. T
A
must be greater than 0°C.
NCV8535
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS – 3.5 V
(V
out
= 3.5 V typical, V
in
= 3.9 V, T
A
= −40°C to +85°C, unless otherwise noted, Note 4.)
Characteristic Symbol Min Typ Max Unit
Output Voltage (Accuracy)
V
in
= 3.9 V to 7.5 V, I
load
= 0.1 mA to 500 mA, T
A
= 25°C
V
out
−0.9%
3.469
3.5 +0.9%
3.532
V
Output Voltage (Accuracy)
V
in
= 3.9 V to 7.5 V, I
load
= 0.1 mA to 500 mA, T
A
= 0°C to +85°C
V
out
−1.4%
3.451
3.5 +1.4%
3.549
V
Output Voltage (Accuracy)
V
in
= 3.9 V to 7.5 V, I
load
= 0.1 mA to 500 mA, T
A
= −40°C to +125°C
V
out
−1.5%
3.448
3.5 +1.5%
3.553
V
Line Regulation
V
in
= 3.9 V to 12 V, I
load
= 0.1 mA
Line
Reg
0.04 mV/V
Load Regulation
V
in
= 3.9 V, I
load
= 0.1 mA to 500 mA
Load
Reg
0.04 mV/mA
Dropout Voltage (See App Note)
I
load
= 500 mA
I
load
= 300 mA
I
load
= 50 mA
I
load
= 0.1 mA
V
DO
340
230
110
10
mV
Peak Output Current (See Figure 16) Ipk 500 700 800 mA
Short Output Current (See Figure 16) I
sc
900 mA
Thermal Shutdown T
J
160 °C
Ground Current
In Regulation
I
load
= 500 mA (Note 5)
I
load
= 300 mA
I
load
= 50 mA
I
load
= 0.1 mA
In Dropout
V
in
= 3.4 V, I
load
= 0.1 mA
In Shutdown
S
D
= 0 V
I
GND
I
GNDsh
9.0
4.6
0.8
−
−
0.07
14
7.5
2.5
190
500
1.0
mA
mA
mA
mA
Output Noise
C
nr
= 0 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
C
nr
= 10 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
V
noise
68
47
mVrms
mVrms
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
2.0
0.4
V
V
S
D
Input Current, V
SD
= 0 V to 0.4 V or V
SD
= 2.0 V to V
in
I
SD
0.07 1.0
mA
Output Current In Shutdown Mode, V
out
= 0 V I
OSD
0.07 1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V
in
= 0 V, V
out_forced
= 3.5 V)
I
OUTR
10
mA
4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T
J
= T
A
= 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. T
A
must be greater than 0°C.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

NCV8535MN500R2G

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Buy NCV8535MN500R2G
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators 500mA LDO AUTO VERSN
Lifecycle:
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