2010 Sep 15 2
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
FEATURES
Specially designed for use at 5 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN SYMBOL DESCRIPTION
1s, bsource
2 d drain
3g
2
gate 2
4g
1
gate 1
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: ME*
handbook, halfpage
MAM192
s,b
d
g
1
g
2
Top view
21
34
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
drain-source voltage 7V
I
D
drain current 40 mA
P
tot
total power dissipation 280 mW
T
j
operating junction temperature 150 C
y
fs
forward transfer admittance 36 43 50 mS
C
ig1-s
input capacitance at gate 1 3.6 4.3 pF
C
rs
reverse transfer capacitance f = 1 MHz 30 50 fF
F noise figure f = 800 MHz 22.8dB
