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NSR0240HT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 2
1 Publication Order Number:
NSR0240H/D
NSR0240H
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240H in a SOD−323 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
• Very Low Forward Voltage Drop −480 mV @ 100 mA
• Low Reverse Current − 0.2 mA @ 25 V VR
• 250 mA of Continuous Forward Current
• Power Dissipation of 160 mW with Minimum Trace
• Very High Switching Speed
• Low Capacitance − CT = 4 pF
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs and PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
40 Vdc
Forward Continuous Current (DC) I
F
250 mA
Non−Repetitive Peak Forward Surge
Current
I
FSM
1.0 A
ESD Rating: Human Body Model
Machine Model
ESD Class 1B
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
40 VOLT SCHOTTKY
BARRIER DIODE
Device Package Shipping
†
ORDERING INFORMATION
NSR0240HT1G SOD−323
(Pb−Free)
3000 / Tape & Ree
l
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
AC = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING
DIAGRAM
1
CATHODE
2
ANODE
SOD−323
CASE 477
STYLE 1
1
2
AC MG
G
NSVR0240HT1G SOD−323
(Pb−Free)
3000 / Tape & Ree
l
(Note: Microdot may be in either location)
NSR0240H
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
740
160
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
460
270
°C/W
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 25 V)
(V
R
= 40 V)
I
R
0.2
0.6
0.55
2.0
10
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 200 mA)
V
F
345
480
585
450
550
710
mV
Total Capacitance
(V
R
= 5.0 V, f = 1 MHz)
CT
4.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
t
rr
3.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
3. Pulse Generator transition time << t
rr
.
4. IR(REC) is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
5. t
p
» t
rr
R
L
= 50 W
Current
Transformer
DUT
750 mH
0.1 mF
50 W Output
Pulse
Generator
t
r
t
p
10%
90%
I
F
I
RM
t
rr
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
Pulse Generator
Output
Figure 1. Recovery Time Equivalent Test Circuit
50 W Input
Oscilloscope
0.1 mF
DC Current
Source
0 V
V
R
Adjust for I
RM
−+
NSR0240H
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
0.60.50.40.30.10
0.001
0.01
0.1
1
10
100
1000
35302520151050
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
Figure 4. Total Capacitance
V
R
, REVERSE VOLTAGE (V)
45352520151050
0
2
4
6
8
10
12
14
I
F
, FORWARD CURRENT (mA)
I
r
, REVERSE CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
0.2
150°C
125°C
−40°C85°C 25°C
150°C
125°C
−40°C
85°C
25°C
1
30 40
T
A
= 25°C
P1-P3P4-P4

NSR0240HT1G

Mfr. #:
Buy NSR0240HT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SCHTY BARRIER DIO
Lifecycle:
New from this manufacturer.
Delivery:
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