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NTLUS3192PZTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. P3
1 Publication Order Number:
NTLUS3192PZ/D
NTLUS3192PZ
Advance Information
Power MOSFET
−20 V, −4.2 A, mCoolt Single P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
• Lowest RDS(on) in 1.6x1.6 Package
• ESD Protected
• This is a Halide Free Device
• This is a Pb−Free Device
Applications
• High Side Load Switch
• PA Switch and Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain-to-Source Voltage V
DSS
−20 V
Gate-to-Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−3.4
A
T
A
= 85°C −2.4
t ≤ 5 s T
A
= 25°C −4.2
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.5
W
t ≤ 5 s T
A
= 25°C 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−2.2
A
T
A
= 85°C −1.6
Power Dissipation (Note 2) T
A
= 25°C P
D
0.6 W
Pulsed Drain Current
tp = 10 ms
I
DM
−17 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−1.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
ESD 1000 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
G
S
P−Channel MOSFET
D
−20 V
115 mW @ −2.5 V
85 mW @ −4.5 V
R
DS(on)
MAX
−3.0 A
I
D
MAXV
(BR)DSS
MOSFET
UDFN6
CASE 517AU
mCOOLt
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AA = Specific Device Code
M = Date Code
G = Pb−Free Package
AA MG
G
1
160 mW @ −1.8 V
MARKING
DIAGRAM
250 mW @ −1.5 V
(Top View)
(Note: Microdot may be in either location)
1
6
−1.5 A
−0.5 A
−0.2 A
NTLUS3192PZ
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction-to-Ambient – Steady State (Note 3)
R
θJA
85
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
θJA
55
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
200
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, ref to 25°C
14 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C −1.0
mA
T
J
= 85°C −10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V 10
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −1.0 V
Negative Threshold Temp. Coefficient V
GS(TH)
/T
J
2.5 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −3.0 A 65 85
mW
V
GS
= −2.5 V, I
D
= −1.5 A 90 115
V
GS
= −1.8 V, I
D
= −0.5 A 120 160
V
GS
= −1.5 V, I
D
= −0.2 A 160 250
Forward Transconductance g
FS
V
DS
= −5.0 V, I
D
= −0.2 A 2.0 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= −10 V
450
pF
Output Capacitance C
OSS
85
Reverse Transfer Capacitance C
RSS
65
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −10 V;
ID = −3.0 A
5.5 8.5
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate-to-Source Charge Q
GS
0.8
Gate-to-Drain Charge Q
GD
1.6
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time t
d(ON)
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −3.0 A, R
G
= 1 W
26
ns
Rise Time t
r
69
Turn-Off Delay Time t
d(OFF)
225
Fall Time t
f
200
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD
V
GS
= 0 V,
I
S
= −1.0 A
T
J
= 25°C 0.72 1.2
V
T
J
= 85°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, dISD/dt = 100 A/ms,
I
S
= −1.0 A
11
ns
Charge Time t
a
8.0
Discharge Time t
b
3.0
Reverse Recovery Charge Q
RR
6.0 nC
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLUS3192PZ
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
4.03.53.02.01.51.00.50
0
2
4
6
10
14
18
20
2.5 3.02.01.51.00.50
0
1
2
4
5
6
9
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
4.03.5 4.53.02.52.01.51.0
0.050
0.075
0.100
0.125
0.150
0.200
0.225
0.250
16141286420
0
0.025
0.050
0.100
0.125
0.175
0.200
0.250
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.6
20151050
10
100
1000
10,000
100,000
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
−I
DSS
, LEAKAGE (nA)
2.5 4.5
8
12
16
V
GS
= −4.5 V
−4.0 V
−3.5 V
−3.0 V
−2.5 V
−2.0 V
−1.8 V
−1.5 V
V
DS
≤ −10 V
3
7
8
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.175
I
D
= −0.2 A
I
D
= −3.0 A
T
J
= 25°C
10 18 20
0.075
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.150
0.225
−1.5 V
T
J
= 25°C
−1.8 V
−2.5 V
V
GS
= −4.5 V
V
GS
= −4.5 V
I
D
= −3.0 A
150
1.0
1.5
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
P1-P3P4-P6

NTLUS3192PZTAG

Mfr. #:
Buy NTLUS3192PZTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 20V 3.4A SGL 6UDFN
Lifecycle:
New from this manufacturer.
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