OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MBRF30H60CTHE3/45

P1-P3P4-P5
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
1
Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
35 V, 45 V, 50 V, 60 V
I
FSM
150 A
V
F
0.56 V, 0.59 V
I
R
80 μA, 60 μA
T
J
max. 175 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Dual Common Cathode
PIN 2
PIN 1
PIN 3
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR30HxxCT
ITO-220AB
MBRB30HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF30HxxCT
TO-263AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Maximum average forward rectified
current (fig. 1)
total device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
150 A
Peak repetitive reverse surge current per diode
at t
p
= 2 μs, 1 kHz
I
RRM
1.0 0.5 A
Peak non-repetitive reverse energy
(8/20 μs waveform)
E
RSM
25 20 mJ
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
2
Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
E
AS
80 mJ
Electrostatic discharge capacitor voltage human
body model: C = 100 pF, R = 1.5 k
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT
MBR30H60CT
UNIT
Maximum instantaneous forward voltage
per diode
(1)
I
F
= 15 A T
C
= 25 °C
V
F
-0.62-0.68
V
I
F
= 15 A T
C
= 125 °C 0.49 0.56 0.55 0.59
I
F
= 30 A T
C
= 25 °C - 0.73 - 0.83
I
F
= 30 A T
C
= 125 °C 0.62 0.67 0.68 0.71
Maximum reverse current per diode at
working peak reverse voltage
(2)
T
J
= 25 °C
I
R
- 80 - 60 μA
T
J
= 125 °C 5.0 15 4.0 15 mA
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance junction to
case per diode
R
JC
1.5 4.5 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR30H45CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF30H45CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB30H45CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB30H45CT-E3/81 1.35 81 800/teel Tape and reel
TO-220AB MBR30H45CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF30H45CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB MBRB30H45CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB30H45CTHE3/81
(1)
1.35 81 800/teel Tape and reel
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
3
Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
10
20
30
40
50250
75 100 125 150 175
MBRF
MBR, MBRB
Average Forward Current (A)
Case Temperature (°C)
1 100
0
25
50
75
100
125
150
10
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
Instantaneous Forward Voltage (V)
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
Instantaneous Forward Current (A)
6040200 10080
0.0001
0.001
0.1
0.01
1
10
100
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (mA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1 1
100
10
1000
100
10 000
Reverse Voltage (V)
Junction Capacitance (pF)
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBRF30H60CTHE3/45

Mfr. #:
Buy MBRF30H60CTHE3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-V30D60CHM3_A/I
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet