MSS1P5, MSS1P6
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Vishay General Semiconductor
Revision: 18-Dec-14
1
Document Number: 89018
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Surface Mount Schottky Barrier Rectifiers
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 60 V
I
FSM
25 A
V
F
at I
F
= 1.0 A 0.52 V
T
J
max. 150 °C
Package MicroSMP
Diode variations Single
MicroSMP
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MSS1P5 MSS1P6 UNIT
Device marking code 15 16
Maximum repetitive peak reverse voltage V
RRM
50 60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
25 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous
forward voltage
I
F
= 0.5 A
T
J
= 25 °C
V
F
(1)
0.45 -
V
I
F
= 1.0 A 0.56 0.68
I
F
= 0.5 A
T
J
= 125 °C
0.40 -
I
F
= 1.0 A 0.52 0.60
Maximum reverse current Rated V
R
T
J
= 25 °C
I
R
(2)
20 150 μA
T
J
= 125 °C 7.0 12 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
40 - pF
