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VN800PSTR-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VN800PS-E
Application informat
ion
Doc ID 1
5610 Re
v 4
19/27
3.4
SO-8 maxim
um demagnetizatio
n energy
Figure 22.
SO-8 maximum turn off current versus
load inductanc
e
Note:
Legend
A = Si
ngle puls
e at T
Jstart
=1
5
0º
C
B = Repe
ti
tive
pulse
at T
Jstart
=1
0
0º
C
C = Repet
itive
Pulse a
t T
Jstart
=1
2
5º
C
Conditio
ns:
V
CC
=1
3
.
5V
V
alues
are gene
rated with
R
L
=0
Ω
In case of repeti
tive pulse
s, T
jstar
t
(at begi
nning of e
ach de
magnetiz
ation) of
every pul
se
must no
t exceed
the temp
erature
specifi
ed above f
or curves
B and C.
Figure 23.
Demagnetization
0.
1
1
10
1
10
100
1000
L(
mH
)
I
LM
AX
(A)
A
B
C
'HPDJQHWL]DWLRQ
'HPDJQHWL]DWLRQ
'HPDJQHWL]DWLRQ
W
9
,1
,
/
*$3*&)7
Package
and PCB th
ermal data
VN800PS-
E
20/27
Doc ID 15610
Rev 4
4
Package and PCB therm
al dat
a
4.1 SO-8
thermal
dat
a
Figure 24.
SO-8 PC board
(1)
1.
Layout condition of R
th
and Z
th
measurements (P
CB FR4 area = 58 mm
x 58 mm
, PCB thickness =
2 m
m,
Cu thickness =
35 µ
m, Copp
er areas: 0.14 cm
2
, 2 cm
2
).
Figure 25.
SO-8 R
thj-
amb
vs PCB copper area in open box free air c
ondition
VN800PS
-E
Package and PCB t
hermal data
Doc ID 1
5610 Re
v 4
21/27
Figure 26.
SO-8 thermal impedance junction ambient single pulse
Figure 27.
Thermal fitting model of a single channel HSD in SO-8
Equation 1 Pulse calculation formula
where
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
Ti
m
e (
s
)
Z
T
H (
°
C/
W
)
0.5 cm
2
2 cm
2
T_amb
C1
R1
R2
C2
R3
C3
R4
C4
R5
C5
R6
C6
Pd
Tj
Z
TH
δ
R
TH
δ
Z
THtp
1
δ
–
()
+
⋅
=
δ
t
p
T
⁄
=
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VN800PSTR-E
Mfr. #:
Buy VN800PSTR-E
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution VIPower High Side 135mOhm 0.7A 36V
Lifecycle:
New from this manufacturer.
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