2 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 11 18 S
C
iss
4200 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 450 pF
C
rss
135 pF
t
d(on)
20 40 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
,4360ns
t
d(off)
I
D
= 0.5 • I
D25
, R
G
= 2 W (External) 70 90 ns
t
f
40 60 ns
Q
g(on)
150 170 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
29 40 nC
Q
gd
60 85 nC
R
thJC
0.42 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 22 A
I
SM
Repetitive; pulse width limited by T
JM
88 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/ms, V
R
= 100 V 250 ns
T
J
= 125°C 400 ns
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXFH 22N55
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025