2004 Jan 16 3
NXP Semiconductors Product data sheet
PNP switching transistors PMBT2907; PMBT2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −60 V
V
CEO
collector-emitter voltage open base
PMBT2907 − −40 V
PMBT2907A − −60 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −600 mA
I
CM
peak collector current − −800 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
