DCP51/-16DCP51/-16
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCP54)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification
Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish − Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
2
3
4
1
UCT T NEW PROD
SOT-223
3
1
2,4
COLLECTOR
BASE
EMITTE
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-45 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-5 V
Peak Pulse Current
I
CM
-1.5 A
Continuous Collector Current
I
C
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @ T
A
= 25°C (Note 3) P
d
1 (Note 3) W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
°C
Thermal Resistance Junction to Ambient Air @ T
A
= 25°C (Note 3)
R
θ
JA
125
°C/W
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-45
⎯ ⎯
V
I
C
= -100μA, I
E
= 0A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-45
⎯ ⎯
V
I
C
= -10mA, I
B
= 0A
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
⎯ ⎯
V
I
E
= -10μA, I
C
= 0A
Collector Cut-Off Current
I
CBO
⎯
⎯
⎯
⎯
-100
-10
nA
μA
V
CB
= -30V, I
E
= 0A
V
CB
= - 30V, I
E
= 0A, T
A
= 150°C
Emitter Cut-Off Current
I
EBO
⎯ ⎯
-10
μA
V
EB
= -5V, I
C
= 0A
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
-0.5 V
I
C
= -500mA, I
B
= -50mA
Base-Emitter Turn-On Voltage
V
BE(ON)
⎯ ⎯
-1.0 V
I
C
= -500mA, V
CE
= -2V
h
FE
40
25
⎯
250
⎯
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
DC Current Gain
DCP51-16 100
⎯
250
⎯
I
C
= -150mA, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
⎯
200
⎯
MHz
I
C
= -50mA, V
CE
= -5V,
f = 100MHz
Note: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
DS31196 Rev. 2 - 2
1 of 4
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DCP51/-16
© Diodes Incorporated
