IXFN25N90 Datasheet IXFN25N90 | P1-P3

DS97526F(12/08)

N-Channel Enhancement Mode

Avalanche Rated,High dv/dt, Low t

rr

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 900 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 900 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 25N90 25 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

25N90 100 A

I

D25

T

C

= 25°C 26N90 26 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

26N90 104 A

I

AR

T

C

= 25°C 25N90 25 A

I

AR

T

C

= 25°C 26N90 26 A

E

AR

T

C

= 25°C64mJ

E

AS

T

C

= 25°C3J

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 150°C 5 V/ns

P

D

T

C

= 25°C 600 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from case for 10s 300 °C

V

ISOL

50/60 Hz, RMS t = 1min 2500 V~

I

ISOL

≤ 1mA t = 1s 3000 V~

M

d

Mounting torque 1.5/13 Nm/lb.in.

Terminal connection torque 1.3/11.5 Nm/lb.in.

Weight 30 g

G

D

S

miniBLOC, SOT-227

E153432

G = Gate D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

HiPerFET

TM

Power MOSFETs

Single Die MOSFET

Features

z

International standard package

z

miniBLOC, with Aluminium nitride

isolation

z

Low R

DS(ON)

HDMOS

TM

process

z

Avalanche Rated

z

Low package inductance

z

Fast intrinsic diode

Advantages

z

Low gate drive requirement

z

High power density

Applications:

z

Switched-mode and resonant-mode

power supplies

z

DC-DC Converters

z

Battery chargers

z

DC choppers

z

Temperature & lighting controls

IXFN25N90

IXFN26N90

V

DSS

I

D25

R

DS(on)

900V 25A 330m

ΩΩ

Ω

900V 26A 300m

ΩΩ

Ω

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified)

Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 900 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 3.0 5.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= 0.8 • V

DSS

100 μA

V

GS

= 0V T

J

= 125°C 2 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 25N90 330 mΩ

26N90

300 mΩ

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN25N90

IXFN26N90

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 0.5 • I

DSS

, Note 1 18 28 S

C

iss

8.7 10.8 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 800 1000 pF

C

rss

300 375 pF

t

d(on)

Resistive Switching Times 60 ns

t

r

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

DSS

35 ns

t

d(off)

R

G

= 1Ω (External) 130 ns

t

f

24 ns

Q

g(on)

240 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

DSS

56 nC

Q

gd

107 nC

R

thJC

0.21 °C/W

R

thCS

0.05 °C/W

Source-Drain Diode Characteristic Values

T

J

= 25°C unless otherwise specified) Min. Typ. Max.

I

S

V

GS

= 0V 25N90 25 A

26N90 26 A

I

SM

Repetitive, pulse width limited by T

JM

25N90 100 A

26N90 104 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

250 ns

Q

RM

1.4 μC

I

RM

10 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

I

F

= I

S

, -di/dt = 100A/μs

V

R

= 100V

SOT-227B Outline

IXFN25N90

IXFN26N90

V

DS

- Volts

0246810

I

D

- Amperes

0

5

10

15

20

V

DS

- Volts

0 5 10 15 20 25

I

D

- Amperes

0

5

10

15

20

25

30

T

J

- Degrees C

25 50 75 100 125 150

R

DS(ON)

- Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

V

GS

- Volts

234567

I

D

- Amperes

0

5

10

15

20

25

30

I

D

- Amperes

0 1020304050

R

DS(ON)

- Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

V

CE

- Volts

0 4 8 12 16 20

I

D

- Amperes

0

10

20

30

40

50

6V

5V

V

GS

= 10V

V

GS

= 9V

8V

T

J

= 25°C

V

GS

= 9V

8V

7V

T

J

= 25°C

T

J

= 125°C

4V

T

J

= 25°C

T

J

= 125°C

5V

6V

4V

5V

6V

V

GS

= 9V

8V

7V

T

J

= 125

O

C

V

GS

= 10V

7V

I

D

= 26A

I

D

= 13A

T

J

= 25

O

C

Figure 1. Output Characteristics at 25

O

C Figure 2. Extended Output Characteristics at 125

O

C

Figure 3. R

DS(on)

normalized to 0.5 I

D25

value vs. I

D

Figure 5. R

DS(on)

normalized to 0.5 I

D25

value vs. I

D

Figure 4. Admittance Curves

6. R

DS(ON)

Normalized to 0.5 I

D25

value vs. T

J

Fig. 6. R

DS(on)

Normalized to 0.5 I

D25

Value vs.

Junction Temperature

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 26A

I

D

= 13A

IXFN25N90

IXFN25N90

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