ZXMP6A18DN8
Document Number DS33592 Rev 3 - 2
4 of 8
www.diodes.com
December 2014
© Diodes Incorporated
ZXMP6A18DN8
ADVANCE INFORMATION
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60
⎯ ⎯
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1 µA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1
⎯ ⎯
V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12)
R
DS(ON)
⎯ ⎯
0.055
Ω
V
GS
= -10V, I
D
= -3.5A
0.08
V
GS
= -4.5V, I
D
= -2.9A
Forward Transconductance (Notes 12 & 14)
g
fs
⎯
8.7
⎯
S
V
DS
= -15V, I
D
= -3.5A
Diode Forward Voltage (Note 12)
V
SD
⎯
-0.85 -0.95 V
I
S
= -4.2A, V
GS
= 0V, T
J
= +25°C
Reverse Recovery Time (Note 14)
t
rr
37
⎯
ns
I
F
= -2.1A, di/dt = 100A/µs, T
J
= +25°C
Reverse Recovery Charge (Note 14)
Q
rr
⎯
56
⎯
nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
C
iss
⎯
1580
⎯
pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
160
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
140
⎯
pF
Total Gate Charge (Note 13)
Q
g
⎯
23
⎯
nC
V
GS
= -5V
V
DS
= -30V
I
D
= -3.5A
Total Gate Charge (Note 13)
Q
g
⎯
44
⎯
nC
V
GS
= -10V
Gate-Source Charge (Note 13)
Q
gs
⎯
3.9
⎯
nC
Gate-Drain Charge (Note 13)
Q
gd
⎯
9.8
⎯
nC
Turn-On Delay Time (Note 13)
t
D(on)
⎯
4.6
⎯
ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 13)
t
r
⎯
5.8
⎯
ns
Turn-Off Delay Time (Note 13)
t
D(off)
⎯
55
⎯
ns
Turn-Off Fall Time (Note 13)
t
f
⎯
23
⎯
ns
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
13. Switching characteristics are independent of operating junction temperatures.
14. For design aid only, not subject to production testing.
