NXP Semiconductors Product specification
Rectifier diodes BYR29 series
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 8 A; T
j
= 150˚C - 1.07 1.50 V
I
F
= 20 A - 1.75 1.95 V
I
R
Reverse current V
R
= V
RRM
- 1.0 10 µA
V
R
= V
RRM
; T
j
= 100 ˚C - 0.1 0.2 mA
Q
s
Reverse recovery charge I
F
= 2 A to V
R
≥ 30 V; - 150 200 nC
dI
F
/dt = 20 A/µs
t
rr
Reverse recovery time I
F
= 1 A to V
R
≥ 30 V; - 60 75 ns
dI
F
/dt = 100 A/µs
I
rrm
Peak reverse recovery current I
F
= 10 A to V
R
≥ 30 V; - - 6 A
dI
F
/dt = 50 A/µs; T
j
= 100 ˚C
V
fr
Forward recovery voltage I
F
= 10 A; dI
F
/dt = 10 A/µs - 5.0 - V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
024681012
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
137.5
125
100
112.5
Vo = 1.26 V
Rs = 0.03 Ohms
D =
t
p
t
p
T
T
t
I
time
time
V
F
V
fr
V
F
I
F
012345678
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
130
140
120
Vo = 1.26 V
Rs = 0.03 Ohms
September 1998 2 Rev 1.300
