IRF7324D1PBF Datasheet IRF7324D1PBF, IRF7324D1TRPBF | P1-P3

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IRF7324D1PbF

FETKY

ä

MOSFET / Schottky Diode

12/06/04

The FETKY family of co-packaged HEXFETs and Schottky diodes offer

the designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques

to achieve extremely low on-resistance per silicon area. Combining this

technology with International Rectifier's low forward drop Schottky rectifiers

results in an extremely efficient device suitable for use in a wide variety of

portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics. The SO-8 package is designed for vapor phase,

infrared or wave soldering techniques.

Description

V

DSS

= -20V

R

DS(on)

= 0.27Ω

Schottky Vf = 0.39V

TM

Top View

8

1

2

3

4

5

6

7

A

S

G

D

K

l Co-packaged HEXFET® Power

MOSFET and Schottky Diode

l Ideal for Mobile Phone Applications

l Generation V Technology

l SO-8 Footprint

l Lead-Free

Notes  through  are on page 8

SO-8

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Power Dissipation

W

P

D

@T

A

= 70°C

Power Dissipation

dV/dt

Peak Diode Recovery

V/ns

Linear Derating Factor mW/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JL

Junction-to-Drain Lead

––– 20 °C/W

R

θ

JA

Junction-to-Ambient

––– 62.5

Max.

-2.2

-1.8

-22

± 12

-20

-55 to + 150

2.0

16

1.3

-0.74

PD-95309A

IRF7324D1PbF

2 www.irf.com

MOSFET Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage -20 ––– ––– V

R

DS(on)

Static Drain-to-Source On-Resistance ––– 0.155 0.270 Ω

––– 0.260 0.400

V

GS(th)

Gate Threshold Voltage -0.70 ––– ––– V

I

DSS

Drain-to-Source Leakage Current ––– ––– -1.0 µA

––– ––– -25

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 2.4 ––– ––– S

Q

g

Total Gate Charge ––– 5.2 7.8

Q

gs

Gate-to-Source Charge ––– 0.88 ––– nC

Q

gd

Gate-to-Drain Charge ––– 2.5 –––

t

d(on)

Turn-On Delay Time ––– 10 –––

t

r

Rise Time –––12–––

t

d(off)

Turn-Off Delay Time ––– 11 ––– ns

t

f

Fall Time ––– 7.6 –––

C

iss

Input Capacitance ––– 260 –––

C

oss

Output Capacitance ––– 140 ––– pF

C

rss

Reverse Transfer Capacitance ––– 70 –––

MOSFET Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– -2.2

I

SM

Pulsed Source Current ––– ––– -22

V

SD

Diode Forward Voltage

–––

-1.2

V

t

rr

Reverse Recovery Time ––– 26 39 ns

Q

rr

Reverse Recovery Charge ––– 24 36 nC

Schottky Diode Maximum Ratings

Parameter

Max. Units

I

F(av)

Max. Average Forward current 1.7 50% Duty Cycle Rectangular Wave, T

A

= 25°C

1.2 A T

A

= 70°C

I

SM

Max.Peak one cycle Non-repetitive 120

5µs sine or 3µs Rect. Pulse Following any rated

Surge Current 11

10ms sine or 6ms Rect. Pulse load condition

&

with VRRM applie

d

Schottky Diode Electrical Specifications

Parameter

Max. Units

V

FM

Max. Forward Voltage Drop 0.50 V

0.62

0.39

0.57

I

RM

Max. Reverse Leakage Current 0.05 mA T

J

= 25°C

10 T

J

= 125°C

Ct Max. Junction Capacitance 92 pF

dV/dt Max. Voltage Rate of Charge 3600 V/µs Rated V

R

V

GS

= 12V

I

D

= -2.2A

T

J

= 25°C, I

F

= -2.2A, V

DD

= -10V

di/dt = 100A/µs

T

J

= 25°C, I

S

= -2.2A, V

GS

= 0V

V

GS

= -4.5V

R

G

= 6.0

Ω

V

DS

= -16V, I

D

= -2.2A

V

DD

= -16V

Conditions

V

GS

= 0V, I

D

= -250µA

V

GS

= -4.5V, I

D

= -1.2A

V

GS

= -12V

V

GS

= -2.7V, I

D

= -0.6A

V

DS

= V

GS

, I

D

= -250µA

V

DS

= -16V, V

GS

= 0V, T

J

= 125°C

V

DS

= -16V, V

GS

= 0V

Conditions

ƒ = 1.0MHz

V

GS

= 0V

V

DS

= -15V

V

DD

= -10V, V

GS

= -4.5V

I

D

= -2.2A

Conditions

R

D

= 4.5Ω

V

R

= 5Vdc (100kHz to 1MHz) 25°C

Conditions

I

F

= 1.0A, T

J

= 25°C

I

F

= 2.0A, T

J

= 25°C

I

F

= 1.0A, T

J

= 125°C

V

R

= 20V

I

F

= 2.0A, T

J

= 125°C

IRF7324D1PbF

www.irf.com 3

Power Mosfet Characteristics

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

0.1 1 10

-V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 150°C

-1.5V

VGS

TOP -7.5V

-5.0V

-4.0V

-3.5V

-3.0V

-2.5V

-2.0V

BOTTOM -1.5V

1.0 2.0 3.0 4.0 5.0 6.0 7.0

-V

GS

, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

V

DS

= -10V

≤ 60µs PULSE WIDTH

T

J

= 25°C

T

J

= 150°C

0.4 0.6 0.8 1.0 1.2 1.4 1.6

-V

SD

, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

-

I

S

D

,

R

e

v

e

r

s

e

D

r

a

i

n

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

GS

= 0V

0.1 1 10

-V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 25°C

-1.5V

VGS

TOP -7.5V

-5.0V

-4.0V

-3.5V

-3.0V

-2.5V

-2.0V

BOTTOM -1.5V

IRF7324D1PBF

IRF7324D1PBF

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