VSIB6A40-E3/45

New Product
VSIB6A20 thru VSIB6A80
Vishay General Semiconductor
Document Number: 84657
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
UL recognition file number E54214
Thin single in-line package
Glass passivated chip junction
High surge current capability
High case dielectric strength of 1500 V
RMS
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
MECHANICAL DATA
Case: GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
I
F(AV)
6.0 A
V
RRM
200 V to 800 V
I
FSM
150 A
I
R
10 µA
V
F
1.0 V
T
J
max. 150 °C
Case Style GSIB-5S
~
~
~
~
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSIB6A20 VSIB6A40 VSIB6A60 VSIB6A80 UNIT
Maximum repetitive peak reverse voltage V
RRM
200 400 600 800 V
Maximum RMS voltage V
RMS
140 280 420 560 V
Maximum DC blocking voltage V
DC
200 400 600 800 V
Maximum average forward rectified
output current at
T
C
= 100 °C
T
A
= 25 °C
I
F(AV)
6.0
(1)
2.8
(2)
A
Peak forward surge current single sine-wave
superimposed on rated load
I
FSM
150 A
Rating for fusing (t < 8.3 ms) I
2
t93A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
New Product
VSIB6A20 thru VSIB6A80
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 84657
Revision: 15-Dec-08
2
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VSIB6A20 VSIB6A40 VSIB6A60 VSIB6A80 UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A V
F
1.00 V
Maximum DC reverse current at
rated DC blocking voltage per diode
T
A
= 25 °C
T
A
= 125 °C
I
R
10
250
µA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSIB6A20 VSIB6A40 VSIB6A60 VSIB6A80 UNIT
Typical thermal resistance
R
θJA
R
θJC
22
(2)
3.4
(1)
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSIB6A60-E3/45 7.0 45 20 Tube
Figure 1. Derating Curve Output Rectified Current
0
50
100
150
0
2
4
6
8
Heatsink Mounting, T
C
P.C.B. Mounting, T
A
Temperature (°C)
Average Forward Output Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
50
100
150
T
J
= T
J
Max.
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
New Product
VSIB6A20 thru VSIB6A80
Vishay General Semiconductor
Document Number: 84657
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in millimeters
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.01
10
0.1
1
100
0.3 1.1 1.20.5 0.7 0.9
1.00.80.60.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1000
20 6040 10080
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
0.1
1
10
100
10
100
1000
1
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
2.5
±
0.2
2.2
±
0.2
1
±
0.1
10
±
0.2
7.5
±
0.2
4
±
0.2
5
20
±
0.3
17
.
5
±
0.5
11
±
0.2
2.7 ± 0.2
3.5
±
0.2
3.2
±
0.2
0.7 ± 0.1
4.6
±
0.2
3.6
±
0.2
+
7.5
±
0.2
30
±
0.3
Case Style GSIB-5S

VSIB6A40-E3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers RECOMMENDED ALT 625-GSIB6A40-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union