SS1P3L, SS1P4L
www.vishay.com
Vishay General Semiconductor
Revision: 13-Apr-15
1
Document Number: 88915
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Low V
F
High Current Density Surface Mount
Schottky Barrier Rectifiers
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
30 V, 40 V
I
FSM
50 A
E
AS
11.25 mJ
V
F
0.35 V, 0.38 V
T
J
max. 150 °C
Package DO-220AA (SMP)
Diode variations Single
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS1P3L SS1P4L UNIT
Device marking code 13L 14L
Maximum repetive peak reverse voltage V
RRM
30 40 V
Maximum average forward rectified current (fig. 1)
T
L
= 140 °C
I
F(AV)
1.0
A
T
L
= 135 °C 1.5
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
I
FSM
50 A
Non-repetitive avalanche energy at I
AS
= 1.5 A, L = 10 mH, T
J
= 25 °C E
AS
11.25 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
