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BSR57,215

P1-P3P4-P6P7-P9P10-P10
BSR56_57_58 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 25 June 2014 4 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
7. Characteristics
Table 7. Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter Conditions BSR56 BSR57 BSR58 Unit
Min Max Min Max Min Max
I
GSS
gate-source cut-off
current
V
DS
= 0 V;
V
GS
= 20 V
- 1.0 - 1.0 - 1.0 nA
I
DSX
drain cut-off current V
DS
= 15 V;
V
GS
= 10 V
- 1.0 - 1.0 - 1.0 nA
V
(BR)GSS
gate-source breakdown
voltage
I
G
= 1 A;
V
DS
= 0 V
->40->40->40V
V
GSoff
gate-source cut-off
voltage
V
DS
=15V;
I
D
= 0.5 nA
>4 - >2 - >0.8 - V
<10 - <6 - <4 - V
I
D
drain current V
DS
=15V; V
GS
= 0 V - >50 - >20 - >8 mA
---<100-<80mA
C
rs
feedback capacitance V
DS
=0 V; V
GS
= 10 V;
f = 1 MHz
-<5-<5-<5pF
R
DSon
drain-source on-state
resistance
V
GS
=0V; I
D
=0A;
f = 1 kHz
-<25-<40-<60
V
DSon
drain-source on-state
voltage
V
GS
=0V; I
D
= 20 mA - <750 - - - - mV
V
GS
=0V; I
D
=10mA ---<500--mV
V
GS
=0V; I
D
=5mA -----<400mV
Switching times (V
DD
= 10 V; V
GS
= 0 V)
t
d
delay time I
D
= 20 mA; V
GSM
= 10 V - <6 - - - - ns
I
D
= 10 mA; V
GSM
= 6 V ---<6--ns
I
D
= 5 mA; V
GSM
= 4 V - - - - - <10 ns
t
r
rise time I
D
= 20 mA; V
GSM
= 10 V - <3 - - - - ns
I
D
= 10 mA; V
GSM
= 6 V ---<4--ns
I
D
= 5 mA; V
GSM
= 4 V - - - - - <10 ns
t
off
turn-off time I
D
= 20 mA; V
GSM
= 10 V -<25----ns
I
D
= 10 mA; V
GSM
= 6 V - - - <50 - - ns
I
D
= 5 mA; V
GSM
= 4 V - - - - - <100 ns
BSR56_57_58 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 25 June 2014 5 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
Fig 2. Switching times waveforms
(1) BSR56; R = 464
(2) BSR57; R = 953
(3) BSR58; R = 1910
Fig 3. Test circuit
Table 8. Test data
Type Pulse generator Oscilloscope
t
r
, t
f
Z
o
C
i
t
r
R
i
BSR56 0.02 1 ns 50  2.5 pF 0.75 ns 1 M
BSR57 0.02 1 ns 50  2.5 pF 0.75 ns 1 M
BSR58 0.02 1 ns 50  2.5 pF 0.75 ns 1 M
aaa-013765
t
r
t
d
0
V
GSM
V
o
V
i
10%
90%
200 ns
t
off
aaa-013764
R
TUT
50 Ω
V
i
V
o
V
DD
BSR56_57_58 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 25 June 2014 6 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
8. Package outline
Fig 4. Package outline SOT23 (TO-236AB)
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT023
TO-236AB
sot023_po
06-03-16
14-06-19
Plastic surface-mounted package; 3 leads SOT023
b
p
D
A
A
1
L
p
Q
H
E
E
0 1 2 mm
scale
c
12
3
B
wB
e
e
1
vA
A
X
Unit
mm
max
nom
min
1.1 0.1 0.15 3.0 1.4
0.2
A
Dimensions (mm are the original dimensions)
A
1
b
p
0.48
cDEee
1
0.95
H
E
L
p
Qvw
0.11.9
2.1 0.150.9 0.09 2.8 1.20.38
2.5 0.45
0.45
0.55
detail X
P1-P3P4-P6P7-P9P10-P10

BSR57,215

Mfr. #:
Buy BSR57,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors TAPE7 FET-RFSS
Lifecycle:
New from this manufacturer.
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