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BSR58,215

P1-P3P4-P6P7-P9P10-P10
1. Product profile
1.1 General description
Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a
plastic microminiature envelope designed for application in thick and thin-film circuits. The
transistors are intended for low-power, chopper or switching applications in industrial
service.
1.2 Features and benefits
Interchangeable drain and source connections
Small package
1.3 Applications
Low-power, chopper or switching applications
Thick and thin-film circuits
1.4 Quick reference data
BSR56; BSR57; BSR58
N-channel FETs
Rev. 3 — 25 June 2014 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions BSR56 BSR57 BSR58 Unit
Min Max Min Max Min Max
V
DS
drain-source voltage - 40 - 40 - 40 V
I
DSS
drain leakage current V
DS
= 15 V; V
GS
=0V;
T
mb
= 40 C
->50->20- >8mA
- - - <100 - <80 mA
V
GSoff
gate-source cut-off
voltage
V
DS
= 15 V;
I
D
= 0.5 nA
>4 - >2 - >0.8 - V
<10 - <6 - <4 - V
C
rs
feedback capacitance V
DS
=0 V; V
GS
= 10 V;
f = 1 MHz
-<5-<5-<5pF
Switching time (V
DD
= 10 V; V
GS
= 0 V)
t
off
turn-off time I
D
= 20 mA; V
GSM
= 10 V - <25 - - - - ns
I
D
= 10 mA; V
GSM
= 6 V - - - <50 - - ns
I
D
= 5 mA; V
GSM
= 4 V -----<100ns
P
tot
total power dissipation T
mb
= 40 °C - 250 - 250 - 250 mW
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=0V; I
D
= 0 A; f = 1 kHz - <25 - <40 - <60
BSR56_57_58 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 25 June 2014 2 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
2. Pinning information
[1] Drain and source are interchangeable.
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain
[1]
2source
[1]
3gate
12
3
sym054
d
sg
Table 3. Ordering information
Type number Package
Name Description Version
BSR56 TO-236AB plastic surface-mounted package; 3 leads SOT23
BSR57
BSR58
Table 4. Marking codes
Type number Marking code
BSR56 M4P
BSR57 M5P
BSR58 M6P
BSR56_57_58 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 25 June 2014 3 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
5. Limiting values
[1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
6. Thermal characteristics
[1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 40 V
V
GS
gate-source voltage - 40 V
V
DG
drain-gate voltage - 40 V
I
G
gate current - 50 mA
P
tot
total power dissipation T
amb
= 40 C
[1]
-250mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
Fig 1. Power derating curve
0
T
amb
(°C)
P
tot
(mW)
300
200
100
0
40 20080 120 160
aaa-013766
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to
ambient
[1]
430 K/W
P1-P3P4-P6P7-P9P10-P10

BSR58,215

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Buy BSR58,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors TAPE7 FET-RFSS
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