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2STC4793

P1-P3P4-P6P7-P7
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
March 2010 Doc ID 15401 Rev 2 1/7
7
2STC4793
NPN power bipolar transistor
Features
■ High breakdown voltage V
CEO
= 230 V
■ Complementary to 2STA1837
■ High transition frequency, typical f
T
= 100 MHz
Applications
■ Audio power amplifier
■ Drive stage amplifier
Description
This device is a NPN transistor manufactured
using new “PB-HDC” (power bipolar high density
current) technology. The resulting transistor
shows good gain linearity behavior.
Figure 1. Internal schematic diagram
1
2
3
TO-220FP
Table 1. Device summary
Order code Marking Package Packaging
2STC4793 2STC4793 TO-220FP Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Electrical ratings 2STC4793
2/7 Doc ID 15401 Rev 2
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 230 V
V
CEO
Collector-emitter voltage (I
B
= 0) 230 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 1 A
I
CM
Collector peak current 2 A
P
TOT
Total dissipation at T
C
= 25 °C 20 W
T
STG
Storage temperature - 65 to 150 °C
T
J
Operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 6.25 °C/W
Obsolete Product(s) - Obsolete Product(s)
2STC4793 Electrical characteristics
Doc ID 15401 Rev 2 3/7
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 230 V 1 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V 1 µA
V
(BR)CEO
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter breakdown
voltage (I
B
= 0)
I
C
= 10 mA 230 V
V
(BR)CBO
Collector-base breakdown
voltage (I
E
= 0)
I
C
= 100 µA 230 V
V
(BR)EBO
(1)
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 1 mA 5 V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 0.5 A I
B
= 50 mA 1 V
V
BE
Base-emitter voltage I
C
= 0.5 A V
CE
= 5 V 1 V
h
FE
DC current gain I
C
= 0.1 A V
CE
= 5 V 100 320
f
T
Transition frequency I
C
= 0.1 A V
CE
= 10 V 100 MHz
C
CBO
Collector-base capacitance
(I
E
= 0)
V
CB
= 10 V f = 1 MHz 20 pF
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P7

2STC4793

Mfr. #:
Buy 2STC4793
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Power 230V 100 MHz 2STA1837
Lifecycle:
New from this manufacturer.
Delivery:
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