VS-40L15CTSPBF

VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
1
Document Number: 94217
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
125 °C T
J
operation (V
R
< 5 V)
Center tap module
Optimized for OR-ing applications
Ultralow forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
I
F(AV)
2 x 20 A
V
R
15 V
V
F
at I
F
see datasheet
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
E
AS
10 mJ
Package TO-263AB (D
2
PAK), TO-262AA
Diode variation Common cathode
TO-262AATO-263AB (D
2
PAK)
Base
common
cathode
A
node Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-40L15CTSPbF
VS-40L15CT-1PbF
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 125 °C (per leg, typical) 0.25 V
T
J
-55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VS-40L15CTSPbF
VS-40L15CT-1PbF
UNITS
Maximum DC reverse voltage V
R
T
J
= 100 °C 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 85 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 10 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
2
Document Number: 94217
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
19 A
T
J
= 25 °C
-0.41
V
40 A - 0.52
19 A
T
J
= 125 °C
0.25 0.33
40 A 0.37 0.50
Reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-10
mA
T
J
= 100 °C - 600
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.182 V
Forward slope resistance r
t
7.6 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C - 2000 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-55 to +125
°C
Maximum storage temperature range T
Stg
-55 to +150
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 40
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style TO-263AB (D
2
PAK) 40L15CTS
Case style TO-262AA 40L15CT-1
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
3
Document Number: 94217
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
0.1
100
10
1
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
3 6 12 159
0
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10520150
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10 100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-40L15CTSPBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-40L15CTS-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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