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TCLT1001
P1-P3
P4-P6
P7-P9
P10-P12
TC
L
T10..
Seri
es
V
i
s
h
a
y
T
elefunken
ww
w
.
vis
ha
y
.c
om
4
(12)
Document
Number
83515
Re
v
.
A3,
19
–
Mar
–
01
Electrical
Characteristics
(T
amb
= 25
°C)
Input
(Em
itter)
Param
eter
T
est
Conditions
S
ym
bo
l
Min.
T
yp
.
Max.
Unit
Forward
v
oltage
I
F
= ± 50 m
A
V
F
1.25
1.6
V
Junction
capacitanc
e
V
R
= 0
V
, f = 1 MH
z
C
j
50
pF
Output
(Detector)
Param
eter
T
est
Conditions
S
ym
bo
l
Min.
T
yp
.
Max.
Unit
Collector
em
itter
vol
tage
I
C
= 1 m
A
V
CEO
70
V
Emitter
c
ollector
volt
age
I
E
= 100
lJ
A
V
ECO
7
V
Collector em
itter c
ut
-of
f c
ur
-
rent
V
CE
= 20
V
, I
f
= 0, E
= 0
I
CEO
10
100
nA
Coupler
Param
eter
T
est
Conditions
S
ym
bo
l
Min.
T
yp
.
Max.
Unit
Collector
em
itter
saturation
vol
tage
I
F
= 10 mA, I
C
= 1 m
A
V
CEsat
0.3
V
Cut
-of
f frequenc
y
V
CE
= 5
V
, I
F
= 10 m
A,
R
L
= 100
Q
f
c
1
10
kHz
Coupling
ca
pacitanc
e
f = 1 MHz
C
k
0.3
pF
Current
T
r
ansfer
Ratio
(CTR)
Param
eter
T
est
Conditions
T
yp
e
S
ym
bo
l
Min.
T
yp
.
Max.
Unit
I
C
/I
F
V
CE
= 5
V
, I
F
= 5 m
A
TC
L
T1000
CTR
0.50
6.0
V
CE
= 5
V
, I
F
= 10 m
A
TC
L
T1001
CTR
0.40
0.8
V
CE
= 5
V
, I
F
= 10 m
A
TC
L
T1002
CTR
0.63
1.25
V
CE
= 5
V
, I
F
= 10 m
A
TC
L
T1003
CTR
1.0
2.0
V
CE
= 5
V
, I
F
= 1 m
A
TC
L
T1001
CTR
0.13
0.30
V
CE
= 5
V
, I
F
= 1 m
A
TC
L
T1002
CTR
0.22
0.45
V
CE
= 5
V
, I
F
= 1 m
A
TC
L
T1003
CTR
0.34
0.70
V
CE
= 5
V
, I
F
= 5 m
A
TC
L
T1005
CTR
0.5
1.5
V
CE
= 5
V
, I
F
= 5 m
A
TC
L
T1006
CTR
1.0
3.0
V
CE
= 5
V
, I
F
= 5 m
A
TC
L
T1007
CTR
0.8
1.6
V
CE
= 5
V
, I
F
= 5 m
A
TC
L
T1008
CTR
1.3
2.6
V
CE
= 5
V
, I
F
= 5 m
A
TC
L
T1009
CTR
2.0
4.0
TC
L
T10..
Seri
es
V
i
s
h
a
y
T
elefunken
Document
Number
83515
Re
v
.
A3,
19
–
Mar
–
01
ww
w
.
vis
ha
y
.c
om
5
(12)
P
tot
– T
ot
al
Power
Dissipation
(
mW
)
Maximum Safety
Ratings
(accordi
ng
to
V
DE
0884)
see
figu
re
1
This
optocoup
ler
is
suita
ble
f
or
safe
elec
trical
iso
lation
onl
y
wit
hin
the
safet
y
rati
ngs.
Com
pliance
wi
th
th
e
safet
y
ratings
sha
ll
be
ensured
by
means
of
suitable
protec
tive
circuits.
Input
(Em
itter)
Param
eters
T
est
Conditions
S
ym
bo
l
V
alue
Unit
Forward c
urrent
I
si
130
mA
Output
(Detector)
Param
eters
T
est
Conditions
S
ym
bo
l
V
alue
Unit
Po
wer
dissipat
ion
T
am
b
≤ 25
C
P
si
265
mW
Coupler
Param
eters
T
est
Conditions
S
ym
bo
l
V
alue
Unit
Rated
im
puls
e
vol
tage
V
IOTM
8
kV
Safety
tem
peratur
e
T
si
150
C
Insul
ation
Rated
Parameters
(accor
din
g
to
VDE
0884)
Param
eter
T
est
Conditions
S
ym
bo
l
Min.
T
yp
.
Max.
Unit
Partial
dis
charge
t
est
vol
tage
–
Routine
test
100%,
t
test
= 1 s
V
pd
1.6
kV
Partial
dis
charge
t
est
volt
a
g
–
Lot test (
sam
ple test)
t
T
r
= 60 s, t
test
= 10 s,
(see
fi
gure
2)
V
IOTM
8
kV
V
pd
1.3
kV
Insula
tio
n
resistanc
e
V
IO
= 500 V
R
IO
10
12
Q
V
IO
= 500
V
,
T
am
b
= 100
C
R
IO
10
11
Q
V
IO
= 500
V
,
T
am
b
= 150
C
(construct
ion
test
only)
R
IO
10
9
Q
300
250
Phototransist
or
Psi
(
mW
)
200
150
100
V
IOTM
V
Pd
V
IOWM
V
IORM
t
1
, t
2
= 1
to
10
s
t
3
,
t
4
=
1 s
t
tes
t
=
10
s
t
st
res
=
12
s
50
IR
-
Diode
Is
i ( mA )
0
0
25
50
75
100
125
150
0
t
1
13930
t
Tr
=
60
s
t
3
t
te
st
t
4
t
2
t
str
es
94
9182
T
si
–
Safe
ty
T
emperature
(
°C )
t
Figure
1.
Derat
i
ng
d
iagram
Figure
2.
T
est puls
e diagram f
or sample test a
ccording to
DIN VDE 0884
TC
L
T10..
Seri
es
V
i
s
h
a
y
T
elefunken
ww
w
.
vis
ha
y
.c
om
6
(12)
Document
Number
83515
Re
v
.
A3,
19
–
Mar
–
01
Swit
ching
Characteristics
Param
eter
T
est
Conditions
S
ym
bo
l
T
yp
.
Unit
Dela
y
time
V
S
= 5
V
, I
C
= 2 m
A, R
L
= 100
Q
(see f
ig re 3)
t
d
3.0
lJ
s
Rise
tim
e
t
r
3.0
lJ
s
T
urn
-
on time
t
on
6.0
lJ
s
Storage
tim
e
t
s
0.3
lJ
s
Fall tim
e
t
f
4.7
lJ
s
T
urn
-of
f
t
im
e
t
off
5.0
lJ
s
T
urn
-
on time
V
S
= 5
V
, I
F
=
10 mA,
R
L
= 1 k
Q
(see fig r
e 4)
t
on
9.0
�
-
t
s
T
urn
-of
f
t
im
e
t
off
10.0
�
-
t
s
I
F
I
F
0
+ 5 V
I
F
I
C
= 2
mA;
adjusted
through
input
a
m
plitude
96
1
1698
R
G
=
50
Q
0
t
t
p
t
p
=
0.01
T
t
p
=
50
�
-t
s
95 10804
50
Q
100
Q
Channel
I
Channel
II
Oscilloscop
e
R
L
= 1 M
Q
C
L
=
20
pF
I
C
100%
90%
Figure
1.
T
est
circu
it,
n
on
-
s
atura
ted
operation
10%
0
t
r
t
d
t
t
s
t
f
I
F
I
F
=
10
mA
0
+ 5 V
I
C
t
on
t
p
pulse
duration
t
off
t
s
storage
tim
e
R
G
=
50
Q
t
p
=
0.01
t
d
delay
time
t
r
rise
tim
e
t
on
(=
t
d
+ t
r
)
turn
-
on
tim
e
t
f
fall
tim
e
t
off
(=
t
s
+ t
f
)
turn
-off
t
im
e
T
t
p
=
50
�
-t
s
50
Q
1 k
Q
Channel
I
Channel
II
Oscilloscop
e
R
L
> 1 M
Q
C
L
<
20
pF
Figure
3.
S
witch
ing times
95 10843
Figure
2.
T
est
circu
it,
saturated
op
eration
P1-P3
P4-P6
P7-P9
P10-P12
TCLT1001
Mfr. #:
Buy TCLT1001
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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TCLT1001