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VS-GB600AH120N

P1-P3P4-P6
VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 22-Oct-15
1
Document Number: 94791
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Molding Type Module IGBT,
1-in-1 Package, 1200 V and 600 A
FEATURES
• High short circuit capability, self limiting to 6 x I
C
• 10 μs short circuit capability
•V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welder at f
sw
up to 20 kHz
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as inverters and UPS.
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C 600 A
V
CE(on)
(typical)
at I
C
= 600 A, 25 °C
1.9 V
Speed 8 kHz to 30 kHz
Package Double INT-A-PAK
Circuit Single switch with AP diode
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
± 20
Collector current at T
J
= 150 °C I
C
T
C
= 25 °C 910
A
T
C
= 80 °C 600
Pulsed collector current I
CM
(1)
T
C
= 80 °C 1200
Diode continuous forward current I
F
600
Diode maximum forward current I
FM
1200
Maximum power dissipation P
D
T
J
= 150 °C 3125 W
Short circuit withstand time t
SC
T
J
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 2500 V
I
2
t-value, diode I
2
tV
R
= 0 V, t = 10 ms, T
J
= 125 °C 74 000 A
2
s
VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 22-Oct-15
2
Document Number: 94791
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 600 A, T
J
= 25 °C - 1.9 -
V
GE
= 15 V, I
C
= 600 A, T
J
= 125 °C - 2.1 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 24 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 600 A, R
g
= 3 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 200 -
ns
Rise time t
r
-62-
Turn-off delay time t
d(off)
- 510 -
Fall time t
f
-60-
Turn-on switching loss E
on
-39-
mJ
Turn-off switching loss E
off
-48-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 600 A, R
g
= 3 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 210 -
ns
Rise time t
r
-65-
Turn-off delay time t
d(off)
- 600 -
Fall time t
f
-75-
Turn-on switching loss E
on
-45-
mJ
Turn-off switching loss E
off
-60-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 41.0 -
nFOutput capacitance C
oes
-3.1-
Reverse transfer capacitance C
res
-2.0-
SC data I
SC
t
SC
10 μs, V
GE
= 15 V, T
J
= 25 °C,
V
CC
= 900 V, V
CEM
1200 V
- 2600 - A
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.18 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 600 A
T
J
= 25 °C - 1.8 2.4
V
T
J
= 125 °C - 1.9 -
Diode reverse recovery charge Q
rr
I
F
= 600 A, V
R
= 600 V,
dI
F
/dt = -6000 A/μs,
V
GE
= -15 V
T
J
= 25 °C - 65 -
μC
T
J
= 125 °C - 100 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 450 -
A
T
J
= 125 °C - 510 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 35 -
mJ
T
J
= 125 °C - 42 -
VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 22-Oct-15
3
Document Number: 94791
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. Collector Current
Fig. 4 - Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating temperature range T
J
-40 - 150 °C
Storage temperature range T
Stg
-40 - 125 °C
Junction to case
per module
IGBT
R
thJC
- - 0.04
K/WDiode - - 0.09
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight 310 g
0
01234
300
600
900
1200
I
C
(A)
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
0
120453786101191312
200
400
800
600
1000
1200
V
GE
(V)
I
C
(A)
125 °C
25 °C
V
CE
= 20 V
I
C
(A)
E
on
, E
off
(mJ)
0
20
40
60
80
100
120
160
140
0 200 600400 800 1000 1200
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 3 Ω
V
CC
= 600 V
E
on
E
off
R
g
(Ω)
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25
E
on
E
off
VGE = ± 15 V
T
J
= 125 °C
I
C
= 600 A
V
CC
= 600 V
E
on
, E
off
(mJ)
P1-P3P4-P6

VS-GB600AH120N

Mfr. #:
Buy VS-GB600AH120N
Manufacturer:
Vishay
Description:
Trans IGBT Module N-CH 1.2KV 910A 4-Pin Double INT-A-PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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