10/25/04
SMALL OUTLINE OPTOCOUPLERS
DARLINGTON OUTPUT
Page 1 of 8
© 2003 Fairchild Semiconductor Corporation
MOC223-M
DESCRIPTION
The MOC223-M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic
silicon photodarlington detector, in a surface mountable, small outline, plastic package. It is ideally
suited for high density applications, and eliminates the need for through - the - board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOC223V-M)
• Industry Standard SOIC-8 Surface Mountable Package with 0.050" lead spacing
• High Current Transfer Ratio of 500% Minimum at I
F
= 1 mA
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation Voltage of 2500 V
AC(rms)
Guaranteed
APPLICATIONS
•Low Power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
•Telecommunications equipment
•Portable electronics
• Solid state relays
BASE
N/C
ANODE
CATHODE
1
2
3
4 5
6
7
8
EMITTER
COLLECTOR
N/C
N/C
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
F
60 mA
Forward Current - Peak (PW = 100 µs, 120 pps) I
F
(pk) 1.0 A
Reverse Voltage V
R
6.0 V
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
90
0.8
mW
mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
7.0 V
Collector-Base Voltage V
CBO
70 V
Collector Current-Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 min.)
V
ISO
2500 Vac(rms)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range T
A
-40 to +100 °C
Storage Temperature Range T
stg
-40 to +150 °C