Io = 100 mA
VR = 45 Volts
CDBFR0145
SMD Schottky Barrier DiodeSMD Schottky Barrier Diode
Page 1
QW-A1063
REV:A
SMD Diodes Specialist
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter
Conditions Min
Max
Unit
V
50
VR
Reverse voltage
V
45
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
1000
PD
mW
O
C
250
+125
-40
Power Dissipation
Sunction temperature
Tj
O
C
+125
Junction temperature
TSTG
mA
IO
Average forward current
mA
100
Symbol
Typ
Parameter
Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IR
uA
Forward voltage
IF = 100 mA DC
VF
V
0.55
9
CT
Capacitance between terimnals
pF
F = 1 MHZ and 10 VDC reverse voltage
Reverse current
VR = 10V 1
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
(IR=0.1uA typ.@VR=10V)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.020(0.50) Typ.
0.040(1.00) Typ.
(RoHs Device)
