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TPC8110(TE12L,Q,M)

P1-P3P4-P6P7-P7
TPC8110
2010-02-01
4
Forward transfer admittance |Y
fs
| (S)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(A)
Gate-source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
|Y
fs
| – I
D
Drain current I
D
(A)
Drain-source ON resistance
R
DS (ON)
(mΩ)
R
DS (ON)
– I
D
−2 −3 −4 −5
Common source
V
DS
= −10 V
Pulse test
0
−20
−30
−40
−10
0 −1
100
Ta = −55°C
25
−4 −8 −10 −12
Common source
Ta = 25°C
Pulse test
0
−0.2
−0.4
−0.6
−0.8
0 −2
I
D
= −8.0 A
−2.0
−6
−4.0
−2 −3 −4 −5
Common source
Ta = 25°C
Pulse test
−2.5
V
GS
= −2.25 V
0
−20
−30
−40
−10
0 −1
−6
−8
−2.75
−3.0
−4
−3.5
−3.25
−10
−5
−3.75
3
10
100
1000
5
30
50
300
500
−0.1 −1 −10 −50
Common source
Ta = 25°C
Pulse test
V
GS
= −4 V
−10
−30 −3 −5 −0.3 −0.5
0.3
1
10
100
0.5
3
5
30
50
−0.1 −1 −10 −50
Common source
V
DS
= −10 V
Pulse test
Ta = −55°C
100
25
−30 −3 −5 −0.3 −0.5
0 −0.2
0
−0.4 −0.6 −0.8 −1
−2
−4
−6
−8
−10
Common source
Ta = 25°C
Pulse test
−2.5
−4−10
−8
V
GS
= −2.25 V
−3.75
−2.75
−3.5
−3.25
−3.0
−6
−5
TPC8110
2010-02-01
5
Ambient temperature Ta (°C)
R
DS (ON)
– Ta
Drain-source ON resistance
R
DS (ON)
(mΩ)
Drain-source voltage V
DS
(V)
I
DR
– V
DS
Drain reverse current I
DR
(A)
Drain-source voltage V
DS
(V)
Capacitance – V
DS
Capacitance C (pF)
Ambient temperature Ta (°C)
V
th
– Ta
Gate threshold voltage V
th
(V)
Ambient temperature Ta (°C)
P
D
– Ta
Drain power dissipation P
D
(W)
Gate-source voltage V
GS
(V)
Total gate charge Q
g
(nC)
Dynamic Input/Output Characteristics
Drain-source voltage V
DS
(V)
30
0
−80 −40 0 40 120 160 80
10
20
40
50
V
GS
= −4 V
Common source
Pulse test
−10 V
I
D
= −2.0,−4.0,−8.0 A
−2.0,−4.0 A
I
D
= − 8.0 A
−1.2
0
−80 −40 0 40 120 160 80
−0.4
−0.8
−1.6
−2
Common source
V
DS
= −10 V
I
D
= −1 mA
Pulse test
100 150 175
0
0.8
1.2
1.6
2.0
0.4
0 50
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
(1)
(2)
25 75 125
V
DS
0
−40
0 20 40
Common source
I
D
= −10 A
Ta = 25°C
Pulse test
V
DD
= 32 V V
GS
80
−8
−10
−20
−30
80
0
−10
−20
−30
−40
−16
30
−0.1 −1 −10
100
1000
C
oss
C
iss
Common source
V
GS
= 0 V
f = 1 MHz
Ta = 25°C
C
rss
3000
10000
300
500
50
−50 −0.3
−3
−30
5000
−5
−0.5
0
−0.1
−1
−10
−100
0.4 0.8 1.2 1.6
−10
Common source
Ta = 25°C
Pulse test
−5
−3
−1 V
GS
= 0 V, 1 V
TPC8110
2010-02-01
6
r
th
− t
w
Safe Operating Area
Pulse width t
w
(s)
Drain-source voltage V
DS
(V)
Normalized transient thermal impedance r
th
(°C/W)
Drain current I
D
(A)
0.1
0.001 0.01 0.1 1 10 100 1000
1
10
100
1000
Single pulse
(2)
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
(1)
−0.1
−3
−1
−10
−100
−0.1 −1 −10 −100
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I
D
max (pulse)*
10 ms*
1 ms*
V
DSS
max
−0.3
−0.5
−5
−30
−50
P1-P3P4-P6P7-P7

TPC8110(TE12L,Q,M)

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