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IPA037N08N3GXKSA1
P1-P3
P4-P6
P7-P9
IPA
037N08N3 G
Opti
MOS
(TM)
3 Pow
er-Transistor
Features
• Ideal for high frequency
switching and sy
nc. rec.
• Optimized technology
for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very
low on-resistance R
DS(on)
• N-channel, normal level
• 100% avalanche te
sted
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Maximum ratings,
at
T
j
=25 °C, unless otherw
ise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
75
A
T
C
=100 °C
54
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
300
Avalanche energy
, single p
ulse
4)
E
AS
I
D
=75 A,
R
GS
=25
W
680
mJ
Gate source voltage
V
GS
±20
V
Power dissipati
on
P
tot
T
C
=25 °C
41
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IE
C 68-1
55/175/56
to carry 178A.
4)
See figure 1
3 for more deta
iled informa
tion
Value
1)
J-STD20 and JESD22
2)
Current is l
imited by pack
age; with an RthJC=0.7
K/W
in a
standard TO-220 pac
kage the ch
ip is able
3)
See figure 3
for more detai
led informati
on
V
DS
80
V
R
DS(on),max
3.7
m
W
I
D
75
A
Product Summary
Type
IPA037N08N3 G
Package
PG
-T
O220-
FP
Marking
037N08N
Rev. 2.1
page 1
2013-08-27
IPA
037N08N3 G
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
Therm
al resistance, junction - case
R
thJC
-
-
3.7
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherw
ise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
80
-
-
V
Gate threshold voltag
e
V
GS(th)
V
DS
=
V
GS
,
I
D
=155 µA
2
2.8
3.5
Zero gate voltage d
rain current
I
DSS
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=75 A
-
3.2
3.7
m
W
V
GS
=6 V,
I
D
=38 A
-
3.9
6.2
Gate resistance
R
G
-
1.9
-
W
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)ma
x
,
I
D
=75 A
66
132
-
S
Values
Rev. 2.1
page 2
2013-08-27
IPA
037N08N3 G
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
6100
8110
pF
Output capacitance
C
oss
-
1640
2180
Reverse transfer capacitance
C
rss
-
59
-
Turn-on delay
tim
e
t
d(on)
-
23
-
ns
Rise time
t
r
-
49
-
Turn-of
f delay
time
t
d(off)
-
46
-
Fall time
t
f
-
13
-
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
-
29
-
nC
Gate to drain charge
Q
gd
-
17
-
Switching
charge
Q
sw
-
30
-
Gate charge total
Q
g
-
88
117
Gate plateau vol
tage
V
plateau
-
4.8
-
V
Output charge
Q
oss
V
DD
=40 V,
V
GS
=0 V
-
119
158
nC
Reverse Diode
Diode continous forward current
I
S
-
-
75
A
Diode pulse current
I
S,pulse
-
-
300
Diode forward voltag
e
V
SD
V
GS
=0 V,
I
F
=75 A,
T
j
=25 °C
-
1.0
1.2
V
Reverse recovery
time
t
rr
-
62
-
ns
Reverse recovery
charge
Q
rr
-
130
-
nC
5)
See figure 1
6 for gate cha
rge parameter d
efinition
V
R
=40 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
V
DD
=40 V,
V
GS
=10 V,
I
D
=75 A,
R
G,ext
=1.6
W
V
DD
=40 V,
I
D
=75 A,
V
GS
=0 to 10 V
Rev. 2.1
page 3
2013-08-27
P1-P3
P4-P6
P7-P9
IPA037N08N3GXKSA1
Mfr. #:
Buy IPA037N08N3GXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V 75A TO220-3
Lifecycle:
New from this manufacturer.
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