MSD42SWT1

Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev . 2
1 Publication Order Number:
MSD42SWT1/D
MSD42SWT1G
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silico n Plan ar T ran s is to r is des ign ed for general purpos e
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RAT INGS (T
A
=25C)
Rating
Symbol Value Unit
Collector-Base V oltage V
(BR)CBO
300 Vdc
Collector-Emitter V oltage V
(BR)CEO
300 Vdc
Emitter-Base Voltage V
(BR)EBO
6.0 Vdc
Collector Current -- Continuous I
C
150 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
D
150 mW
Junction Temperature T
J
150 C
Storage Temperature Range T
stg
-- 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc,I
B
=0)
V
(BR)CEO
300 -- Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
=0)
V
(BR)CBO
300 -- Vdc
Emitter-Base Breakdown Voltage
(I
E
= 100 mAdc, I
E
=0)
V
(BR)EBO
6.0 -- Vdc
Collector-Base Cutoff Current
(V
CB
= 300 Vdc, I
E
=0)
I
CBO
-- 0.1 mA
Emitter--Base Cutoff Current
(V
EB
=6.0Vdc,I
B
=0)
I
EBO
-- 0.1 mA
DC Current Gain (Note 2)
(V
CE
=10Vdc,I
C
=1.0mAdc)
(V
CE
=10Vdc,I
C
=30mAdc)
h
FE1
h
FE2
25
40
200
--
--
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 200 mAdc,
I
B
=2.0mAdc)
V
CE(sat)
-- 0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
SC--70 (SOT--323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Device Package Shipping
ORDERING INFORMATION
D4 = Device Code
M = Date Code*
G = Pb--Free Package
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MSD42SWT1G SC--70/SOT--323
(Pb--Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
D4 M G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MSD42SWT1G
http://onsemi.com
2
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
H
E
e1
0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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damages. Typi cal” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applic ations and actual performance may vary over
time. All operating parameters, including “Typicals ” must be validated for each cus tomer applic ation by customer’s technical experts. SCILLC does not c onvey any license under
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MSD425WT1/D
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a
Sales Representative

MSD42SWT1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 150mA 300V NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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