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SI7664DP-T1-E3

P1-P3P4-P6P7-P7
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4
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
Vishay Siliconix
Si7664DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
T
J
= 150 °C
1
10
100
0.1
0.01
0.001
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
Variance (V)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
012345678910
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
J
= 25 °C
T
J
= 125 °C
0.000
0.004
0.008
0.012
0.016
0.020
0
120
200
40
80
Power (W)
Time (s)
160
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
100
1
0.01 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms
DC
1 s
10 s
0.1
Limited by
R
DS(on)*
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
www.vishay.com
5
Vishay Siliconix
Si7664DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
31
62
93
124
155
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Limited by Package
Power, Junction-to-Case
0
20
40
60
80
100
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
Vishay Siliconix
Si7664DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73566.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
10
-2
1 10 100010
-1
10
-3
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-4
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
110
-1
10
-4
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P7

SI7664DP-T1-E3

Mfr. #:
Buy SI7664DP-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 40A PPAK SO-8
Lifecycle:
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