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VF20120SG-E3/4W

P1-P3P4-P6
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
1
Document Number: 88994
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.54 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
RRM
120 V
I
FSM
150 A
V
F
at I
F
= 20 A 0.78 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation Single die
TO-220AB
V20120SG VF20120SG
VI20120SGVB20120SG
PIN 1
PIN 2
PIN 3
K
1
2
3
1
K
2
3
TO-263AB
NC
A
K
HEATSINK
NC
A
K
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
TO-262AA
TMBS
®
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120SG VF20120SG VB20120SG VI20120SG UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (fig. 1) I
F(AV)
20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH E
AS
80 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
2
Document Number: 88994
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
120 (minimum) - V
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.62 -
V
I
F
= 10 A 0.81 -
I
F
= 20 A 1.20 1.33
I
F
= 5 A
T
A
= 125 °C
0.54 -
I
F
= 10 A 0.65 -
I
F
= 20 A 0.78 0.88
Reverse current
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
10 - µA
T
A
= 125 °C 7-mA
V
R
= 120 V
T
A
= 25 °C - 250 µA
T
A
= 125 °C 12 25 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120SG VF20120SG VB20120SG VI20120SG UNIT
Typical thermal resistance R
JC
2.2 4.2 2.2 2.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20120SG-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF20120SG-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB20120SG-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB20120SG-E3/8W 1.38 8W 800/reel Tape and reel
TO-262AA VI20120SG-E3/4W 1.45 4W 50/tube Tube
Case Temperature (°C)
Average Forward Current (A)
20
25
15
10
5
0
0 25 50 75 100 125 150 175
VF20120SG
V(B,I)20120SG
Resistive or Inductive Load
Mounted on Specific Heatsink
0
5
10
15
20
25
30
35
048 12 16 20 24
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
3
Document Number: 88994
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Typical Transient Thermal Impedance
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70
80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
10
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
V(B,I)20120SG
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VF20120SG
Junction to Case
P1-P3P4-P6

VF20120SG-E3/4W

Mfr. #:
Buy VF20120SG-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20 Amp 120 Volt Single TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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