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2DB1386Q-13

P1-P3P4-P6
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
1 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
20V PNP MEDIUM POWER TRANSISTOR IN SOT89
Features
BV
CEO
> -20V
I
C
= -5A high Continuous Current
Low saturation voltage V
CE(sat)
< -1V @ -4A
Complementary NPN Type: 2DD2098
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
2DB1386Q-13 KP3Q 13 12 2,500
2DB1386Q-13R KP3Q 13 12 4,000
2DB1386R-13 KP3R 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
KP3x = Product Type Marking Code,
where: KP3Q = 2DB1386Q
KP3R = 2DB1386R
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
KP3x
YWW
Top View
Device Symbol
Pin Out – Top View
SOT89
C
E
B
C
E
C
B
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-30 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-6 V
Continuous Collector Current
I
C
-5 A
Peak Pulse Current
I
CM
-10 A
Base Current
I
B
-500 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 5)
R
JA
125 °C/W
Thermal Resistance, Junction to Leads (Note 6)
R
θJL
19 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
3 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BV
CBO
-30
V
I
C
= -50µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-20
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
V
I
E
= -50µA, I
C
= 0
Collector Cut-Off Current
I
CBO
-0.5
A
V
CB
= -20V, I
E
= 0
Emitter Cut-Off Current
I
EBO
 
-0.5
A
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
V
CE
(
SAT
)
-0.25 -1.0 V
I
C
= -4A, I
B
= -0.1A
DC Current Gain
2DB1386Q
h
FE
120
270
I
C
= -0.5A, V
CE
= -2V
2DB1386R 180

390
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
55
pF
V
CB
= -20V, I
E
= 0, f = 1MHz
Current Gain-Bandwidth Product
f
T

100

MHz
V
CE
= -6V, I
E
= 50mA,
f = 30MHz
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 1 Typical DC Current Gain
vs. Collector Current (2DB1386Q)
h
FE
, D
C
C
U
R
R
EN
T
G
AIN
0
50
100
150
200
250
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
300
350
400
V = -2V
CE
-V , COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 2 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = -4mA
B
I = -8mA
B
I = -6mA
B
I = -2mA
B
I = -10mA
B
P1-P3P4-P6

2DB1386Q-13

Mfr. #:
Buy 2DB1386Q-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 1000W -20Vceo
Lifecycle:
New from this manufacturer.
Delivery:
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