IXFX52N60Q2

© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 600 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M 600 V
V
GS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C52A
I
DM
T
C
= 25°C, pulse width limited by T
JM
208 A
I
AR
T
C
= 25°C52A
E
AR
T
C
= 25°C75mJ
E
AS
T
C
= 25°C 4.0 J
dv/dt I
S
I
DM
, di/dt 100 A/µs, V
DD
V
DSS
, 20 V/ns
T
J
150°C, R
G
= 2
P
D
T
C
= 25°C 735 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque TO-264 0.9/6 Nm/lb.in.
Weight PLUS-247 6 g
TO-264 10 g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Features
z
Double metal process for low gate
resistance
z
International standard packages
z
Epoxy meet UL 94 V-0, flammability
classification
z
Avalanche energy and current rated
z
Fast intrinsic Rectifier
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA 2.0 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C50µA
V
GS
= 0 V T
J
= 125°C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 • I
D25
115 m
Pulse test, t 300 µs, duty cycle d 2 %
G = Gate D = Drain
S = Source TAB = Drain
DS98982(12/02)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 600 V
I
D25
= 52 A
R
DS(on)
= 115 m
t
rr
250 ns
IXFK 52N60Q2
IXFX 52N60Q2
PLUS 247
TM
(IXFX)
G
D
D (TAB)
Advanced Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test 30 40 S
C
iss
6800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1000 pF
C
rss
225 pF
t
d(on)
23 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
13 ns
t
d(off)
R
G
= 1.0 (External), 56 ns
t
f
8.5 ns
Q
g(on)
198 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
43 nC
Q
gd
94 nC
R
thJC
0.17 K/W
R
thCK
TO-264 0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 52 A
I
SM
Repetitive; pulse width limited by T
JM
208 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t 300 µs, duty cycle d 2 %
t
rr
250 ns
Q
RM
1 µC
I
RM
10 A
I
F
= 25A, -di/dt = 100 A/µs, V
R
= 100 V
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
IXFK 52N60Q2
IXFX 52N60Q2
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline

IXFX52N60Q2

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET 52 Amps 600V 0.12 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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