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VS-10TQ045S-M3

P1-P3P4-P6P7-P7
VS-10TQ035S-M3, VS-10TQ045S-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Feb-14
1
Document Number: 94923
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 10 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10TQ...S-M3 Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
10 A
V
R
35 V,45 V
V
F
at I
F
0.49 V
I
RM
max. 15 mA at 125 °C
T
J
max. 175 °C
E
AS
13 mJ
Package TO-263AB (D
2
PAK)
Diode variation Single die
Anode
1
3
Base
cathode
2
N/C
D
2
PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10 A
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 1050 A
V
F
10 A
pk
, T
J
= 125 °C 0.49 V
T
J
Range -55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10TQ035S-M3 VS-10TQ045S-M3 UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 151 °C, rectangular waveform 10 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1050
A
10 ms sine or 6 ms rect. pulse 280
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6.5 mH 13 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-10TQ035S-M3, VS-10TQ045S-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Feb-14
2
Document Number: 94923
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
10 A
T
J
= 25 °C
0.57
V
20 A 0.67
10 A
T
J
= 125 °C
0.49
20 A 0.61
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2
mA
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 900 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK
10TQ035S
10TQ045S
100
10
0.1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0 0.2 0.6 1.0 1.4 1.8
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.4
0.8
1.2
1.6
1
1000
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
05
15 25
35 40 45
10
1000
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10 20
30
100
VS-10TQ035S-M3, VS-10TQ045S-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Feb-14
3
Document Number: 94923
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
20
40 5010 30
T
J
= 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
155
160
165
170
175
180
051015
10TQ
R
thJC
(DC) = 2.0 °C/W
DC
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
51015
0
1
2
4
3
8
DC
RMS limit
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
5
6
7
P1-P3P4-P6P7-P7

VS-10TQ045S-M3

Mfr. #:
Buy VS-10TQ045S-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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