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BDW93B-S

P1-P3P4-P4
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
1
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
●
80 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum h
FE
of 750 at 3 V, 5 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BDW93
BDW93A
BDW93B
BDW93C
V
CBO
45
60
80
100
V
Collector-emitter voltage (I
B
= 0)
BDW93
BDW93A
BDW93B
BDW93C
V
CEO
45
60
80
100
V
Emitter-base voltage V
EBO
5V
Continuous collector current I
C
12 A
Continuous base current I
B
0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
tot
80 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
tot
2W
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating free-air temperature range T
A
-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
2
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 100 mA I
B
= 0 (see Note 3)
BDW93
BDW93A
BDW93B
BDW93C
45
60
80
100
V
I
CEO
Collector-emitter
cut-off current
V
CB
= 40 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 80 V
I
B
=0
I
B
=0
I
B
=0
I
B
=0
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
mA
I
CBO
Collector cut-off
current
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
0.1
0.1
0.1
0.1
5
5
5
5
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V I
C
=0 2 mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
I
C
= 3 A
I
C
= 10 A
I
C
= 5 A
(see Notes 3 and 4)
1000
100
750 20000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 20 mA
I
B
= 100 mA
I
C
= 5 A
I
C
= 10 A
(see Notes 3 and 4)
2
3
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 20 mA
I
B
= 100 mA
I
C
= 5 A
I
C
= 10 A
(see Notes 3 and 4)
2.5
4
V
V
EC
Parallel diode
forward voltage
I
E
= 5 A
I
E
= 10 A
I
B
= 0
I
B
= 0
2
4
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 1.56 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
OBSOLETE
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
3
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·5 201·0 10
h
FE
- Typical DC Current Gain
50000
100
1000
10000
TCS130AE
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·5 201·0 10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
0·5
1·0
1·5
2·0
2·5
3·0
TCS130AG
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·5 201·0 10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0
TCS130AI
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
OBSOLETE
P1-P3P4-P4

BDW93B-S

Mfr. #:
Buy BDW93B-S
Manufacturer:
Bourns
Description:
Darlington Transistors 80V 12A NPN
Lifecycle:
New from this manufacturer.
Delivery:
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