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MJF122G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 7
1 Publication Order Number:
MJF122/D
MJF122, MJF127
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
• Electrically Similar to the Popular TIP122 and TIP127
• 100 V
CEO(sus)
• 5.0 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain − 2000 (Min) @ I
C
= 3 Adc
• UL Recognized, File #E69369, to 3500 V
RMS
Isolation
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5 Vdc
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H. ≤ 30%, T
A
= 25°C)
Per Figure 14
V
ISOL
4500 V
RMS
Collector Current − Continuous
Peak
I
C
5
8
Adc
Base Current I
B
0.12 Adc
Total Power Dissipation (Note 2)
@ T
C
= 25_C
Derate above 25_C
P
D
30
0.24
W
W/_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
2
0.016
W
W/_C
Operating and Storage Junction Temperat-
ure Range
T
J
, T
stg
−65 to
+ 150
I
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Thermal Resistance, Junction−to−Case
(Note 2)
R
q
JC
4.1
_C/W
Lead Temperature for Soldering Purpose T
L
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
mounting surface (in a location beneath the die), the device mounted on a
heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
http://onsemi.com
MARKING
DIAGRAM
x = 2 or 7
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
COMPLEMENTARY SILICON
POWER DARLINGTONS
5.0 A, 100 V, 30 W
TO−220
CASE 221D−02
STYLE 2
MJF12xG
AYWW
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
MJF122 TO−220 50 Units / Rail
MJF122G TO−220
(Pb−Free)
50 Units / Rail
MJF127 TO−220 50 Units / Rail
MJF127G TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
COLLECTOR 2
BASE
1
EMITTER 3
COLLECTOR 2
BASE
1
EMITTER 3
NPN PNP
MJF122 MJF127
3
2
1
MJF122, MJF127
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
100 − Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
− 10
mAdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
I
CBO
− 10
mAdc
Emitter Cutoff Current (V
BE
= 5 Vdc, I
C
= 0) I
EBO
− 2 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (I
C
= 0.5 Adc, V
CE
= 3 Vdc)
DC Current Gain (I
C
= 3 Adc, V
CE
= 3 Vdc)
h
FE
1000
2000
−
−
−
Collector−Emitter Saturation Voltage (I
C
= 3 Adc, I
B
= 12 mAdc)
Collector−Emitter Saturation Voltage (I
C
= 5 Adc, I
B
= 20 mAdc)
V
CE(sat)
−
−
2
3.5
Vdc
Base−Emitter On Voltage (I
C
= 3 Adc, V
CE
= 3 Vdc) V
BE(on)
− 2.5 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz) h
fe
4 − −
Output Capacitance MJF127
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) MJF122
C
ob
−
−
300
200
pF
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Switching Times Test Circuit
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.1 0.7 100.5
0.3
25
5
I
C
, COLLECTOR CURRENT (AMP)
t
d
@ V
BE(off)
= 0 V
t, TIME (s)μ
2
1
0.5
0.2
0.1
0.05
Figure 2. Typical Switching Times
t
s
t
f
0.3
3
0.2
1
0.07
0.7
37
PNP
NPN
≈120≈8 k
V
2
APPROX.
+8 V
V
1
APPROX.
-12 V
25 ms
R
B
51
D
1
+4 V
V
CC
- 30 V
R
C
SCOPE
TUT
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
t
r
0
MJF122, MJF127
http://onsemi.com
3
P
D
, POWER DISSIPATION (WATTS)
0
80
60
40
20
4
3
2
1
T
A
T
C
0
Figure 3. Maximum Power Derating
T, TEMPERATURE (°C)
40 60 100 120 16080 140
T
C
20
t, TIME (ms)
0.01
0.1 0.5 10 20 50 100 200 500 5K 10
K
152
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
SINGLE PULSE
R
q
JC(t)
= r(t) R
q
JC
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
0.5
0.3
0.03
0.02
0.2
1K 2K30 3003
0.3
3K
T
A
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
1
10
1
30
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
T
C
= 25°C (SINGLE PULSE)
I
C
, COLLECTOR CURRENT (AMPS)
0.1
23 50
3
0.3
10
0.2
d
c
T
J
= 150°C
1ms
5 ms
100 ms
2
5
0.5
5 10020
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
P1-P3P4-P6P7-P7

MJF122G

Mfr. #:
Buy MJF122G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 5A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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