SBL1040CT, SBLB1040CT
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Vishay General Semiconductor
Revision: 13-Jun-2018
1
Document Number: 88726
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
40 V
I
FSM
175 A
V
F
0.55 V
T
J
max. 125 °C
Package TO-220AB, D
2
PAK (TO-263AB)
Circuit configuration Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL1040CT
SBLB1040CT
PIN 1
K
PIN 2
HEATSINK
1
2
3
1
2
K
D
2
PAK (TO-263AB)
click logo to get started
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL1040CT UNIT
Maximum repetitive peak reverse voltage V
RRM
40
VWorking peak reverse voltage V
RWM
28
Maximum DC blocking voltage V
DC
40
Maximum average forward rectified current
at T
C
= 107 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
175
Operating junction and storage temperature range T
J
, T
STG
-40 to +125 °C