Characteristics STPS20M120S
2/8 Doc ID 022920 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.54 x I
F(AV)
+ 0.0075 x I
F(RMS)
2
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at
T
amb
= 25 °C, unless otherwise specified)
Symbo
l
Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
Forward rms current 50 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 125 °C 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal, T
c
= 25 °C 240 A
P
ARM
(1)
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Repetitive peak avalanche power T
j
= 125 °C, t
p
= 10 µs 1200 W
V
ARM
(2)
2. See Figure 9
Maximum repetitive
peak avalanche voltage
t
p
< 10 µs, T
j
< 125 °C, I
AR
< 8 A 150 V
V
ASM
(2)
Maximum single-pulse
peak avalanche voltage
t
p
< 10 µs, T
j
< 125 °C, I
AR
< 8 A 150 V
T
stg
Storage temperature range
-65 to
+175
°C
T
j
Maximum operating junction temperature
(3)
3. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 1.35 °C/W
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
=V
RRM
- 55 275 µA
T
j
= 125 °C - 20 50 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 125 °C I
F
= 5 A - 0.47 0.52
V
T
j
= 25 °C
I
F
= 10 A
-0.72
T
j
= 125 °C - 0.52 0.57
T
j
= 25 °C
I
F
= 20 A
-0.84
T
j
= 125 °C - 0.63 0.69
dPtot
dTj
<
1
Rth(j-a)
