Symbol Min Typ Max Units
600
700
BV
DSS
0.56
V/
o
C
1
10
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
3 4.3 5 V
R
DS(ON)
0.58 0.7
Ω
g
FS
8.8 S
V
SD
0.74 1 V
I
S
10 A
I
SM
40 A
C
iss
1595 pF
C
oss
56 pF
C
o(er)
42 pF
C
o(tr)
74 pF
C
rss
11 pF
R
g
1.7 Ω
Q
g
26 40 nC
Q
8.1 nC
V
DS
=40V, I
D
=5A
V
GS
=10V, I
D
=5A
V
GS
=0V, V
DS
=100V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
Static Drain-Source On-Resistance
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
V
Reverse Transfer Capacitance
V
DS
=5V
,
I
D
=250µA
Output Capacitance
Forward Transconductance
I
S
=1A,V
GS
=0V
I
D
=250µA, V
GS
=0V, T
J
=150°C
Breakdown Voltage Temperature
Coefficient
I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
µA
V
DS
=480V, T
J
=125°C
Maximum Body-Diode Pulsed Current
C
Effective output capacitance, energy
related
H
Effective output capacitance, time
related
I
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
V
DS
=0V, V
GS
=±30V
Gate-Body leakage current
V
GS
=10V, V
DS
=480V, I
D
=10A
Total Gate Charge
Gate Source Charge
SWITCHING PARAMETERS
Q
gd
8.2 nC
t
D(on)
42 ns
t
r
54 ns
t
D(off)
52 ns
t
f
24 ns
t
rr
497 ns
Q
rr
7.3
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=300V, I
D
=10A,
R
G
=25Ω
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
Turn-On Rise Time
Turn-On DelayTime
Gate Drain Charge
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=4A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C.
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. I
SD
≤I
D
, di/dt≤200A/µs, V
DD
=400V, T
J
≤T
J(MAX)
.
Rev.2.0: March 2014 www.aosmd.com Page 2 of 7
